Publications [#67629] of Richard B. Fair

Papers Published

1. Fair, R.B. and Kim, Y., Defects induced in silicon during ion implantation and rapid thermal annealing, Proceedings of the Second Symposium on Defects in Silicon. Defects in Silicon II (1991), pp. 423 - 40, Washington, DC, USA
   (last updated on 2007/04/17)

   Abstract:
   Nuclear stopping processes of ions implanted into Si produce displacement damage. Important variables that affect the type of damage produced include implant species, energy dose, dose rate, wafer temperature and orientation, and materials on the Si surface through which ions pass. Defect evolution during RTA depends on temperature, time, furnace ambient and ramp-up/ramp-down rates. Cause and effect relationships have been established to understand the resulting point-defect generation processes and junction formation variables

   Keywords:
   annealing;elemental semiconductors;energy loss of particles;ion beam effects;ion implantation;point defects;rapid thermal processing;silicon;