Publications [#67641] of Richard B. Fair

Papers Published

1. Fair, R.B. and Tsai, J.C.C., Theory and direct measurement of boron segregation in SiO₂ during dry, near dry, and wet O₂ oxidation, J. Electrochem. Soc. (USA), vol. 25 no. 12 (1978), pp. 2050 - 8
   (last updated on 2007/04/17)

   Abstract:
   A theory of B segregation is developed which accounts for the differences in m observed in, for example, diffusion from a highly doped B₂O₃ source as compared to oxidation of B-doped Si in wet and dry oxidizing ambients. Most dry O₂ oxidations are really only partially dry and the presence of as little as ~20 ppm H₂O results in an m essentially the same as oxidation in 100% steam, i.e., m=0.58 at 1200°C with an `effective' activation energy of 0.64 eV. However, in a truly dry oxidation, the B segregation coefficient at 1200°C is ~1 with an effective activation energy of 0.33 eV. It is proposed that these differences as well as the m>2 observed in high concentration B₂O₃ diffusion source oxidations are determined by the formation thermodynamics of the B compounds created during segregation. Quantitative agreement with m values obtained from directly measured B distributions across the SiO₂/Si interface are obtained

   Keywords:
   boron;elemental semiconductors;oxidation;segregation;silicon;silicon compounds;