Publications [#67647] of Richard B. Fair

Papers Published

1. Kim, Yudong and Massoud, Hisham Z. and Fair, Richard B., Effect of annealing ambient on dopant diffusion in silicon during low-temperature processing, Journal of the Electrochemical Society, vol. 137 no. 8 (1990), pp. 2599 - 2603
   (last updated on 2007/04/17)

   Abstract:
   Annealing ambient effects on dopant diffusion in silicon were investigated during low-temperature processing. BF₂, P, and As were implanted at room temperature in (100) silicon through a 140 angstrom thick layer of SiO₂ with the ion beam normal to the wafer surface, and the implant dose and energy sufficient to amorphize the surface layer. After low-temperature furnace annealing, ion-implanted B,P, and As in Si show a transient enhanced diffusion regime in both inert and oxidizing ambients. It was expected that point-defect generation during the annealing of implant damage would dominate the transient enhanced diffusion process regardless of the ambient. However, deeper P junctions were observed for implants annealed in an oxidizing ambient when the surface oxidation consumed more than 50 angstrom of Si. We propose that stress in the surface layer plays an important role in the diffusion of high-dose P implants. The effect of oxidation is to consume this highly stressed surface layer which can suppress the P diffusion in the tail region. The role of the surface stress layer in P diffusion is discussed and profile simulations using this model are presented.

   Keywords:
   Heat Treatment--Annealing;Semiconductor Devices--Junctions;Diffusion;