Publications [#67671] of Richard B. Fair

Papers Published

1. Fair, R. B., EFFECTS OF IMPURITY DIFFUSION AND SURFACE DAMAGE ON OXYGEN PRECIPITATION IN SILICON., Journal of Applied Physics, vol. 54 no. 1 (1983), pp. 388 - 391 [1.331714]
   (last updated on 2007/04/17)

   Abstract:
   The rate of oxygen precipitation in Czochralski-grown silicon with oxygen supersaturation ratios s greater than 5 and s less than 5 at 1000 degree C was studied as a function of surface processing. Reference samples were compared with samples diffused with high-concentration phosphorus or arsenic layers in N//2 or O//2 ambients. Oxygen precipitation was also studied in samples with air-abraded surfaces. It was found that for s greater than 5 the concentration of oxygen in SiO//2 precipitates in P diffused wafers did not equal the change in intersititial oxygen, and a high density of stacking faults were seen in the bulk. It is concluded that the point defects generated from damaged surfaces and P-diffused surfaces are not the same as those generated from an undoped surface during oxidation. A model describing the effect of surface-generated vacancies and silicon self-interstitials on oxygen precipitate nucleation and growth is discussed.

   Keywords:
   OXYGEN;