Publications [#67678] of Richard B. Fair

Papers Published

1. Fair, Richard B. and Ruggles, Gary A., Thermal budget issues for deep submicron ULSI, Solid State Technology, vol. 33 no. 5 (1990), pp. 107 - 113
   (last updated on 2007/04/17)

   Abstract:
   The thermal budget available for sub 0.5 μm silicon processing decreases rapidly due to implantation damage-assisted diffusion, which derives junctions deeper than desired. Thus current ion implantation technology may not be practical for scaled 0.25 μm MOS technology. Alternatives for junction formation are reviewed, and issues of oxide thickness control and related equipment considerations are discussed.

   Keywords:
   Semiconductor Materials--Ion Implantation;Semiconductor Devices, MOS;