Publications [#67690] of Richard B. Fair

Papers Published

1. Fair, Richard B., BORON DIFFUSION IN SILICON EM DASH CONCENTRATION AND ORIENTATION DEPENDENCE, BACKGROUND EFFECTS, AND PROFILE ESTIMATION., Journal of the Electrochemical Society, vol. 122 no. 6 (1975), pp. 800 - 805
   (last updated on 2007/04/17)

   Abstract:
   Discussion of a model of B diffusion which can be used to explain various effects. Data and arguments are presented which show that B diffuses via a monovacancy mechanism when the diffusion is performed in a nonoxidizing ambient. High concentration B diffusions into Si over a 550 degree C temperature range in neutral ambients result in profile data that fit a normalized universal curve which is a polynomial approximation to the solution of the diffusion equation with concentration-dependent diffusivity. From this result, useful curves of surface concentration vs. resistivity and junction depth are presented.

   Keywords:
   SEMICONDUCTING SILICON;