Publications [#67698] of Richard B. Fair

Papers Published

1. Fair, R.B., Effect of strain-induced band-gap narrowing on E-centre concentrations in Si, International Conference on Defects and Radiation Effects in Semiconductors (1979), pp. 559 - 65, Nice, France
   (last updated on 2007/04/17)

   Abstract:
   A strain effect has been found to explain the anomalous reduction of phosphorus diffusivity in Si at surface concentrations greater than about 4×10²⁰ cm^-3. It is shown that band-gap narrowing results in reduced P diffusivity through a relative reduction of (PV)^- pairs in the surface region

   Keywords:
   colour centres;deformation;diffusion in solids;elemental semiconductors;phosphorus;semiconductor doping;silicon;