Publications [#67702] of Richard B. Fair

Papers Published

1. Fair, R.B. and Tsai, J.C.C., A quantitative model for the diffusion of phosphorus in silicon and the emitter dip effect, J. Electrochem. Soc. (USA), vol. 124 no. 7 (1977), pp. 1107 - 18
   (last updated on 2007/04/17)

   Abstract:
   A consistent model of P diffusion in Si is presented which accounts quantitatively for the existence of electrically inactive P, the `kink' and the tail regions of the P profile, and the emitter dip effect. In this model it is shown that three intrinsic P diffusion coefficients exist, each one associated with the diffusion of P with vacancies in three different charge states. In a npn structure, the charge state of the excess vacancies becomes V⁺ in the base region, thus enhancing the diffusivity of the base dopant and causing the emitter dip effect. The magnitude by which the P tail diffusivity and the base dopant diffusivity are enhanced is the same and may reach a factor of 135 for a 900°C diffusion

   Keywords:
   bipolar transistors;diffusion in solids;doping profiles;elemental semiconductors;phosphorus;semiconductor doping;silicon;