Publications [#67704] of Richard B. Fair

Papers Published

1. Fair, Richard B., Unified model of boron diffusion in thin gate oxides: effects of F, H₂, N, oxide thickness and injected Si interstitials, Technical Digest - International Electron Devices Meeting (1995), pp. 85 - 88, Washington, DC, USA [IEDM.1995.497188]
   (last updated on 2007/04/17)

   Abstract:
   This work is describes the first unified network-defect-level model for B diffusion in SiO₂ for use in process simulation. Models have been developed to explain silicon processing effects on B diffusion through thin gate oxides. With these models we can predict the enhanced B diffusion effects in poly Si/SiO₂ structures from BF₂ implants, wet oxidation and exposure to H₂ ambients, and the concentration of N in nitrided oxides in reducing B diffusion. We have also shown for the first time that there is an oxide thickness dependence on B diffusion.

   Keywords:
   Mathematical models;Semiconducting boron;Oxides;Silica;Computer simulation;Gates (transistor);Nitrogen;Hydrogen;Semiconducting silicon;Polycrystalline materials;