Publications [#67715] of Richard B. Fair

Papers Published

1. Tsai, J. C. C. and Schimmel, D. G. and Fair, R. B. and Maszara, W., POINT DEFECT GENERATION DURING PHOSPHORUS DIFFUSION IN SILICON. I. CONCENTRATIONS ABOVE SOLID SOLUBILITY., Journal of the Electrochemical Society, vol. 134 no. 6 (1987), pp. 1508 - 1518
   (last updated on 2007/04/17)

   Abstract:
   The goal of the present research was to investigate the proposal that P diffusion at concentrations above solid solubility generates silicon self-interstitials. Buried layers of As and Sb were created by either implanting Sb at 150 kev, 5 multiplied by 10**1**3 cm** minus **2 or As at 100 kev, 1. 0 multiplied by 10**1**4 cm** minus right double quote in LT AN BR 100 RT AN BR Si substrates. After a 900 degree C, 30 min anneal in N//2, an 8-10 mu m thick epi layer was grown over the buried layers. Masking oxides were then created either by depositing a LPCVD SiO//2 layer (1 mu m) or by thermal oxidation at 900 degree C in steam. Spreading resistance profiles were taken on all samples. SIMS was used to characterize the chemical P doping densities. Plan view and cross-section TEM was used to look for SiP precipitates and defects in the P-diffused layers. Major results of this matrix of experiments are examined.

   Keywords:
   PHOSPHORUS - Diffusion;HEAT TREATMENT - Annealing;ELECTRIC MEASUREMENTS - Resistance;