Publications [#67718] of Richard B. Fair

Papers Published

1. Fair, R. B., ON THE ROLE OF SELF-INTERSTITIALS IN IMPURITY DIFFUSION IN SILICON., Journal of Applied Physics, vol. 51 no. 11 (1980), pp. 5828 - 5832 [1.327540]
   (last updated on 2007/04/17)

   Abstract:
   The question of whether the monovacancy or the self-interstitial is the point defect responsible for impurity diffusion is reviewed in the light or buried marker diffusion experiments and irradiation-enhanced diffusion data. It is concluded that coupled vacancy-impurity diffusion is the preferred interpretation, but no definite conclusions can be drawn. However, the role of the self-interstitial in diffusion is suggested through a model which assumes that during oxidation, exchanges can take place between vacancies, self-interstitials, impurity interstitials, and substitutional impurities. Calculations of impurity interstitial formation energies are consistent with the degree of oxidation enhanced diffusion measured for boron, phosphorus, and arsenic.

   Keywords:
   SEMICONDUCTING SILICON;