Publications [#67726] of Richard B. Fair

Papers Published

1. Fair, R.B. and Subrahmanyan, R., PREDICT-a new design tool for shallow junction processes, Proc. SPIE - Int. Soc. Opt. Eng. (USA), vol. 530 (1985), pp. 88 - 96, Los Angeles, CA, USA
   (last updated on 2007/04/17)

   Abstract:
   A new one-dimensional process estimator for the design of IC technologies (PREDICT) has been developed which rigorously solves coupled equations describing dopant behavior under modern processing conditions. All of the models in PREDICT have been verified with extensive experimental measurements. Such models include a new ion implantation algorithm with empirical parameters to describe the exponential tail formed through ion channeling, rapid thermal diffusion of B, As, and P, accurate oxidation calculations including the effects of pressure, HCl and doping concentrations, effects of stress and dopant precipitation and clustering, ion pairing, implantation through deposited or grown films (oxide, polysilicon, nitride), concentration effects, etc. PREDICT has been used to do accurate simulation of high dose B and BF₂ implants/diffusions in both ⟨100⟩ and ⟨111⟩ Si. Considerations in these calculations include channeling during implantation, the effects of pre-amorphization, damage-induced dislocation networks and the enhanced diffusion of B outside of these networks, and precipitation of B using a 12 atom cluster model

   Keywords:
   electronic engineering computing;elemental semiconductors;integrated circuit technology;ion implantation;semiconductor doping;semiconductor technology;silicon;