Publications [#67734] of Richard B. Fair

Papers Published

1. Fair, Richard B., THE EFFECT OF STRAIN-INDUCED BAND-GAP NARROWING ON HIGH CONCENTRATION PHOSPHORUS DIFFUSION IN SILICON., Journal of Applied Physics, vol. 50 no. 2 (1979), pp. 860 - 868 [1.326001]
   (last updated on 2007/04/17)

   Abstract:
   A strain effect has been found to explain the anomalous reduction in P diffusivity at surface concentrations greater than similar 4 multiplied by 10**2**0 cm** minus **3. It is shown that at diffusion temperatures, misfit-induced strain causes a reduction in the effective Si band gap up to similar minus 130 meV at the solubility limit of P. This band-gap narrowing results in reduced P diffusivity through a relative reduction of P** plus V** equals pairs in the surface region. This complex is the dominant species for P transport at high P concentrations. The diffusion of P in the tail region is dominated by V** minus vacancies liberated during P** plus V** equals pair dissociation events. Thus, the tail diffusivity will likewise be reduced by band-gap narrowing in the surface region. These reductions in diffusivity can be by as much as a factor of 6 depending upon temperature and P doping.

   Keywords:
   BAND STRUCTURE;PHOSPHORUS - Diffusion;