Publications [#67739] of Richard B. Fair

Papers Published

1. Fair, R.B., Process models for ultra-shallow junction technologies, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5) (1987), pp. 260 - 3, Washington, DC, USA
   (last updated on 2007/04/17)

   Abstract:
   Submicrometer technologies include low thermal budget processing, Ge⁺ or Si⁺ preamorphization implants, ultra low-energy B and As implants, thin oxides, and silicides contacts. These technologies and the models required to simulate them are not simple extrapolations of existing process models. Major new process variables used include crystal damage produced during implantation and the annealing of this damage, point-defect injection during contacting, and implantation parameters associated with preamorphization. Process models that describe these effects are described. The models are based on extensive data generated as part of a shallow junction, submicrometer CMOS program, the models have been imbedded in the PREDICT process simulation code

   Keywords:
   annealing;CMOS integrated circuits;electronic engineering computing;integrated circuit technology;ion implantation;