Publications [#67762] of Richard B. Fair

Papers Published

1. FAIR, R. B. and CARIM, A., ON THE DOPING DEPENDENCE OF OXIDATION-INDUCED STACKING FAULT SHRINKAGE IN SILICON., vol. 129 no. 10 (1982), pp. 2319 - 2321
   (last updated on 2007/04/17)

   Abstract:
   THE EFFECT OF DOPANT CONCENTRATION ON THE SHRINKAGE OF OXIDATION-INDUCED STACKING FAULTS (OSF) IN SILICON DURING N//2 ANNEALING HAS BEEN CONTROVERSIAL. IN THIS WORK, THE AUTHORS DEMONSTRATE THAT OSF SHRINKAGE DURING N//2 ANNEALING CAN BE ENHANCED BY THE PRESENCE OF RELATIVELY SHALLOW PHOSPHORUS-IMPLANTED LAYERS. THE SHRINKAGE RATE SHOWS A DOPING DEPENDENCE THAT IS CONSISTENT WITH VACANCY ABSORPTION THAT INCREASES WITH DOPING. HOWEVER, AT INTRINSIC DOPING CONCENTRATIONS IT ISARGUED THAT THE FAULTS SHRINK BY EMITTING SELF INTERSTITIALS.

   Keywords:
   SEMICONDUCTING SILICON - OXIDATION;