Publications [#67766] of Richard B. Fair

Papers Published

1. Fair, R.B. and Sun, R.C., Threshold voltage instability in MOSFETs due to channel hot hole emission, International Electron Devices Meeting. Technical Digest (1980), pp. 746 - 9, Washington, DC, USA
   (last updated on 2007/04/17)

   Abstract:
   Hydrogen introduced and trapped in the gate oxide of MOSFETs by the silicon nitride capping process can be activated by emitted holes from the MOSFET channel to produce a large threshold voltage shift. This effect requires avalanche multiplication in the channel for the production of holes and a DC voltage applied to the gate. For the pulsed gate case, the magnitude of the threshold voltage shift also depends significantly on the gate-pulse fall time, cycle time and duty cycle. In both cases the electric field normal to the Si/SiO₂ interface near the drain aids the emission of holes across that interface. A semiquantitative model is proposed which says that holes can recombine at H₂ molecules and release sufficient energy to cause dissociation. Model calculations of the time, temperature and voltage dependences of threshold instability agree well with measured results

   Keywords:
   hot carriers;insulated gate field effect transistors;semiconductor device models;