Publications [#67772] of Richard B. Fair

Papers Published

1. Meyer, William G. and Fair, Richard B., DYNAMIC BEHAVIOR OF THE BUILDUP OF FIXED CHARGE AND INTERFACE STATES DURING HOT-CARRIER INJECTION IN ENCAPSULATED MOSFET's., IEEE Transactions on Electron Devices, vol. ED-30 no. 2 (1983), pp. 96 - 103
   (last updated on 2007/04/17)

   Abstract:
   The aging behavior of MOSFET's encapsulated with various types of capping layers was studied. Aging consisted of room-temperature pulsed gate bias operation with a drain-to-source voltage sufficient to cause avalanche multiplication in the channel. It was verified by secondary ion mass spectroscopy (SIMS) profiling that plasma silicon nitride capping layers introduce 2-4 times more hydrogen at the Si-gate oxide interface than exists in uncapped devices. Capping materials that serve as hydrogen barriers contribute to device aging by trapping hydrogen that is liberated during hot-carrier emission into the gate oxide.

   Keywords:
   SEMICONDUCTOR DEVICES, MOSFET;