Hisham Z. Massoud, Professor of Electrical and Computer Engineering

Hisham Z. Massoud joined the Duke ECE Department in 1983, where is now a Professor. He is the founding director of the Semiconductor Research Laboratory. Professor Massoud has been a research scientist at the IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y., in 1977 and 1980-81, the Microelectronics Center of North Carolina in 1987, the Hewlett-Packard Integrated Circuits Business Division in 1992, and the Max-Planck Institute for Microstructure Physics in 1997 and 1998. He is a Fellow of the Institute of Electrical and Electronics Engineers and Fellow of the Electrochemical Society. He was awarded the 2006 Electronics and Photonics Division Award of the Electrochemical Society (ECS) for his work on ultrathin MOS gate dielectric films.

Contact Info:

Office Location:	CIEMAS Building, Room 3521
Office Phone:	(919) 660-5257
Email Address:

Education:

Ph.D., EE	Stanford University	1983
M.S., EE	Stanford University	1976
M.Sc., EE	Cairo University	1975
B.Sc., EE	Cairo University	1973

Specialties:

Nanoscale/microscale computing systems
Nanomaterial manufacturing and characterization
Photonics
Nanoscale/microscale computing systems
Computer Engineering
Education, Engineering
Electronic Devices
Manufacturing
Semiconductors
Microsystems

Research Interests: Semiconductor Devices and Integrated Circuits

Current projects: Carrier tunneling effects on static and dynamic integrated circuit performance.

Professor Massoud is interested in ultrathin gate dielectrics for CMOS ULSI. His interest span the technology, phyiscs, modeling, simulation, and characterization of ultrathin-oxide MOSFETs. He has led a research program in the modeling and simulation of quantum-mechanical carrier tunneling in ultrathin gate dielectrics. He is interested in the effects of gate tunneling on the static, dynamic, and power performance of future generation of MOS integrated circuits. He is also interested in the modeling and simulation of nanoelectronic devices.

Areas of Interest:

Carrier tunneling in MOS devices
Semiconductor devices
Integrated circuits
MOS device physics, modeling, and simulation
MOS device characterization and metrology
Microelectronics and Nanoelectronics

Keywords:

Semiconductors • Devices • Circuits • Microelectronics • Nanoelectronics • MOS • CMOS

Recent Publications   (More Publications)

1. Massoud, Hisham Z., Growth kinetics and electrical properties of ultrathin silicon-dioxide layers, ECS Transactions, vol. 2 no. 2 (2006), pp. 189 - 203, Denver, CO, United States  [abs]
2. Oliver, Lara D. and Chakrabarty, Krishnendu and Massoud, Hisham Z., An evaluation of the impact of gate oxide tunneling on dual-V _t-based leakage reduction techniques, Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI, vol. 2006 (2006), pp. 105 - 110, Philadelphia, PA, United States  [abs]
3. Collins, Leslie M. and Huettel, Lisa G. and Brown, April S. and Ybarra, Gary A. and Holmes, Joseph S. and Board, John A. and Cummer, Steven A. and Gustafson, Michael R. and Kim, Jungsang and Massoud, Hisham Z., Theme-based redesign of the duke university ECE curriculum: The first steps, ASEE Annual Conference and Exposition, Conference Proceedings (2005), pp. 14313 - 14326, Portland, OR, United States  [abs]
4. Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5, edited by Massoud, H.Z.;Stathis, J.H.;Hattori, T.;Misra, D.;Baumvol, I.;, ECS Transactions, vol. 1 no. 1 (2005), pp. 310 -, Los Angeles, CA, United States  [abs]
5. Shen, M. and Jopling, J. and Massoud, H.Z., On the effects of carrier tunneling on the capacitance-voltage characteristics of ultrathin-oxide MOSFETs, Meeting Abstracts, vol. MA 2005-02 (2005), pp. 1474 -, Los Angeles, CA, United States  [abs]