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Publications of Hisham Z. Massoud    :chronological  alphabetical  combined  bibtex listing:

Papers Published

  1. Massoud, Hisham Z., Growth kinetics and electrical properties of ultrathin silicon-dioxide layers, ECS Transactions, vol. 2 no. 2 (2006), pp. 189 - 203, Denver, CO, United States  [abs]
  2. Oliver, Lara D. and Chakrabarty, Krishnendu and Massoud, Hisham Z., An evaluation of the impact of gate oxide tunneling on dual-V t-based leakage reduction techniques, Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI, vol. 2006 (2006), pp. 105 - 110, Philadelphia, PA, United States  [abs]
  3. Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5, edited by Massoud, H.Z.;Stathis, J.H.;Hattori, T.;Misra, D.;Baumvol, I.;, ECS Transactions, vol. 1 no. 1 (2005), pp. 310 -, Los Angeles, CA, United States  [abs]
  4. Shen, M. and Jopling, J. and Massoud, H.Z., On the effects of carrier tunneling on the capacitance-voltage characteristics of ultrathin-oxide MOSFETs, Meeting Abstracts, vol. MA 2005-02 (2005), pp. 1474 -, Los Angeles, CA, United States  [abs]
  5. Shen, M.Y.C. and Jopling, J. and Massoud, H.Z., On the effects of carrier tunneling on the capacitance-voltage characteristics of ultrathin-oxide MOSFETs, ECS Transactions, vol. 1 no. 1 (2005), pp. 283 - 294, Los Angeles, CA, United States  [abs]
  6. Massoud, Hisham Z. and Stathis, James H. and Hattori, Takeo and Misra, Durga and Baumvol, Israel, ECS Transactions: Preface, ECS Transactions, vol. 1 no. 1 (2005), pp. - -, Los Angeles, CA, United States
  7. Collins, Leslie M. and Huettel, Lisa G. and Brown, April S. and Ybarra, Gary A. and Holmes, Joseph S. and Board, John A. and Cummer, Steven A. and Gustafson, Michael R. and Kim, Jungsang and Massoud, Hisham Z., Theme-based redesign of the duke university ECE curriculum: The first steps, ASEE Annual Conference and Exposition, Conference Proceedings (2005), pp. 14313 - 14326, Portland, OR, United States  [abs]
  8. Cheng, Candong and Liu, Qing Huo and Massoud, Hisham Z., Spectral element method for the schrodinger-poisson system, 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts (2004), pp. 221 - 222, West Lafayette, IN, United States  [abs]
  9. Candong Cheng and Qing Huo Liu and Massoud, H.Z., Spectral element method for the Schrodinger-Poisson system, 2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915) (2004), pp. 221 - 2, West Lafayette, IN, USA  [abs]
  10. Huettel, Lisa and Brown, April and Gustafson, Michael and Massoud, Hisham and Ybarra, Gary and Collins, Leslie, Work in progress: Theme-based redesign of an electrical and computer engineering curriculum, Proceedings - Frontiers in Education Conference, FIE, vol. 3 (2004), pp. 2-1-2-2 -, Savannah, GA, United States  [abs]
  11. Qing Huo Liu and Candong Cheng and Massoud, H.Z., The spectral grid method: a novel fast Schrodinger-equation solver for semiconductor nanodevice simulation, IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. (USA), vol. 23 no. 8 (2004), pp. 1200 - 8 [TCAD.2004.831592]  [abs]
  12. Przewlocki, H.M. and Kudla, A. and Brzezinska, D. and Massoud, H.Z., Distribution of the contact-potential difference local values over the gate area of MOS structures, Microelectron. Eng. (Netherlands), vol. 72 no. 1-4 (2004), pp. 165 - 73, Barcelona, Spain [031]  [abs]
  13. Przewlocki, H.M. and Kudla, A. and Brzezinska, D. and Borowicz, L. and Sawicki, Z. and Massoud, H.Z., The lateral distribution of the effective contact potential difference over the gate area of MOS structures, Electron Technology, vol. 35 (2003), pp. 6 -  [abs]
  14. Przewlocki, H.M. and Massoud, H.Z., Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the Si/SiO2 interface of metal-oxide-semiconductor devices, J. Appl. Phys. (USA), vol. 92 no. 4 (2002), pp. 2198 - 201 [1.1489499]  [abs]
  15. Massoud, H.Z. and Przewlocki, H.M., Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices, J. Appl. Phys. (USA), vol. 92 no. 4 (2002), pp. 2202 - 6 [1.1489500]  [abs]
  16. Massoud, H.Z. and Shiely, J.P. and Shanware, A., Self-consistent MOSFET tunneling simulations-trends in the gate and substrate currents and the drain-current turnaround effect with oxide scaling, Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics. Symposium (1999), pp. 227 - 39, San Francisco, CA, USA  [abs]
  17. Shanware, A. and Massoud, H.Z. and Acker, A. and Li, V.Z.Q. and Mirabedini, M.R. and Henson, K. and Hauser, J.R. and Wortman, J.J., Modeling the dependence of the gate current on Ge content in ultrathin gate dielectric PMOS devices with poly-Si1-xGex gate material, Materials Research Society Symposium - Proceedings, vol. 567 (1999), pp. 127 - 133, San Francisco, CA, USA  [abs]
  18. Shanware, A. and Shiely, J.P. and Massoud, H.Z. and Vogel, E. and Henson, K. and Srivastava, A. and Osburn, C. and Hauser, J.R. and Wortman, J.J., Extraction of the gate oxide thickness of N- and P-Channel MOSFETs below 20 Å from the substrate current resulting from valence-band electron tunneling, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) (1999), pp. 815 - 18, Washington, DC, USA [IEDM.1999.824274]  [abs]
  19. Massoud, H.Z. and Shiely, J.P. and Shanware, A., Self-consistent MOSFET tunneling simulations - trends in the gate and substrate currents and the drain-current turnaround effect with oxide scaling, Materials Research Society Symposium - Proceedings, vol. 567 (1999), pp. 227 - 239, San Francisco, CA, USA  [abs]
  20. Shanware, A. and Massoud, H.Z. and Vogel, E. and Henson, K. and Hauser, J.R. and Wortman, J.J., Comparison of valence-band tunneling in pure SiO2, composite SiO2/Ta2O5, and pure Ta2O5, in MOSFETs with 1.0 nm-thick SiO2-equivalent gate dielectrics, Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics. Symposium (1999), pp. 515 - 20, San Francisco, CA, USA  [abs]
  21. Shanware, A. and Massoud, H.Z. and Vogel, E. and Henson, K. and Hauser, J.R. and Wortman, J.J., Comparison of valence-band tunneling in pure SiO2, composite SiO2/Ta2O5, and pure Ta2O5, in MOSFETs with 1.0 nm-thick SiO2-equivalent gate dielectrics, Materials Research Society Symposium - Proceedings, vol. 567 (1999), pp. 515 - 520, San Francisco, CA, USA  [abs]
  22. Vasudevan, N. and Massoud, H.Z. and Fair, R.B., A thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses, J. Electrochem. Soc. (USA), vol. 146 no. 4 (1999), pp. 1536 - 9 [1.1391800]  [abs]
  23. Vasudevan, N. and Fair, R.B. and Massoud, H.Z. and Zhao, T. and Look, K. and Karpovich, Y. and Hart, M.J., ON-state reliability of amorphous-silicon antifuses, J. Appl. Phys. (USA), vol. 84 no. 11 (1998), pp. 6440 - 7 [1.368884]  [abs]
  24. Vasudevan, N. and Fair, R.B. and Massoud, H.Z., Energy considerations during the growth of a molten filament in metal-to-metal amorphous-silicon antifuses, J. Appl. Phys. (USA), vol. 84 no. 9 (1998), pp. 4979 - 83 [1.368743]  [abs]
  25. Wu, Y. and Lucovsky, G. and Massoud, H.Z., Improvement of gate dielectric reliability for p+ poly MOS devices using remote PECVD top nitride deposition on thin gate oxides, 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) (1998), pp. 70 - 5, Reno, NV, USA [RELPHY.1998.670446]  [abs]
  26. Lucovsky, G. and Yang, H. and Massoud, H.Z., Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces, J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA), vol. 16 no. 4 (1998), pp. 2191 - 8, Salt Lake City, UT, USA [1.590147]  [abs]
  27. Proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. ULSI Science and Technology 1997, edited by Massoud, H.Z.;Iwai, H.;Claeys, C.;Fair, R.B.; (1997), pp. xiii+664 -, Montreal, Que., Canada  [abs]
  28. Massoud, H.Z., Ellipsometry-based process monitoring and control for ultrathin gate dielectrics, Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (1997), pp. 208 - 16, Montreal, Que., Canada  [abs]
  29. Massoud, H.Z., Thermal oxidation of silicon in the ultrathin regime, Solid-State Electron. (UK), vol. 41 no. 7 (1997), pp. 929 - 34, Crete, Greece [S0038-1101(97)00001-4]  [abs]
  30. Mirabedini, M.R. and Goodwin-Johansson, S.H. and Massoud, H.Z., Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon, Electron. Lett. (UK), vol. 33 no. 13 (1997), pp. 1183 - 4 [el:19970776]  [abs]
  31. Massoud, H.Z., Device physics and simulation of metal/ferroelectric-film/p-type silicon capacitors, Microelectron. Eng. (Netherlands), vol. 36 no. 1-4 (1997), pp. 95 - 8, Stenungsund, Sweden [S0167-9317(97)00023-3]  [abs]
  32. Massoud, H.Z. and Shiely, J.P., The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Nordheim tunneling regime, Microelectron. Eng. (Netherlands), vol. 36 no. 1-4 (1997), pp. 263 - 6, Stenungsund, Sweden [S0167-9317(97)00060-9]  [abs]
  33. Conrad, K.A. and Sampson, R.K. and Massoud, H.Z. and Irene, E.A., Design and construction of a rapid thermal processing system for in situ optical measurements, Rev. Sci. Instrum. (USA), vol. 67 no. 11 (1996), pp. 3954 - 7 [1.1147273]  [abs]
  34. Thees, H.-J. and Osburn, C.M. and Shiely, J.P. and Massoud, H.Z., Wear-out and stress-induced leakage current of ultrathin gate oxides, Proceedings of the Third International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 3 1996 (1996), pp. 677 - 86, Los Angeles, CA, USA  [abs]
  35. Proceedings of Third International Symposium on the Physics and Chemistry of Si02 and the Si Si02 Interface (ISBN 1 56677 151 X), edited by Massoud, H.Z.;Poindexter, E.H.;Helms, C.R.; (1996), pp. xv+780 -, Los Angeles, CA, USA  [abs]
  36. Massoud, H.Z., The onset of the thermal oxidation of silicon from room temperature to 1000°C [ULSI MOS], Microelectron. Eng. (Netherlands), vol. 28 no. 1-4 (1995), pp. 109 - 16, Villard de Lans, France [0167-9317(95)00026-5]  [abs]
  37. Mirabedini, M.R. and Goodwin-Johansson, S.H. and Massoud, H.Z., New properties and applications of electron-beam evaporated silicon in submicron elevated source/drain metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. (USA), vol. 65 no. 6 (1994), pp. 728 - 30 [1.113014]  [abs]
  38. Sampson, R.K. and Conrad, K.A. and Massoud, H.Z. and Irene, E.A., Substrate doping and microroughness effects in RTP temperature measurement by in situ ellipsometry, J. Electrochem. Soc. (USA), vol. 141 no. 3 (1994), pp. 737 - 41  [abs]
  39. Sampson, R.K. and Conrad, K.A. and Massoud, H.Z. and Irene, E.A., Wavelength considerations for improved silicon wafer temperature measurement by ellipsometry, J. Electrochem. Soc. (USA), vol. 141 no. 2 (1994), pp. 539 - 42  [abs]
  40. Conrad, K.A. and Sampson, R.K. and Massoud, H.Z. and Irene, E.A., Ellipsometric monitoring and control of the rapid thermal oxidation of silicon, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 11 no. 6 (1993), pp. 2096 - 101 [1.586548]  [abs]
  41. Neuman, Michael R. and Fair, Richard B. and Mehragany, Mehran and Massoud, Hisham Z., Microelectromechanical systems: a new technology for biomedical applications, Proceedings of the Annual Conference on Engineering in Medicine and Biology, vol. 15 no. pt 3 (1993), pp. 1545 - 1546, San Diego, CA, USA  [abs]
  42. Sampson, R.K. and Conrad, K.A. and Irene, E.A. and Massoud, H.Z., Simultaneous silicon wafer temperature and oxide film thickness measurement in rapid-thermal processing using ellipsometry, J. Electrochem. Soc. (USA), vol. 140 no. 6 (1993), pp. 1734 - 43  [abs]
  43. Mitani, K. and Massoud, H.Z., C-V measurement and simulation of silicon-insulator-silicon (SIS) structures for analyzing charges in buried oxides of bonded SOI materials, IEICE Trans. Electron. (Japan), vol. E75-C no. 12 (1992), pp. 1421 - 9  [abs]
  44. Deaton, R. and Massoud, H.Z., Manufacturability of rapid-thermal oxidation of silicon: oxide thickness, oxide thickness variation, and system dependency, IEEE Trans. Semicond. Manuf. (USA), vol. 5 no. 4 (1992), pp. 347 - 58 [66.175367]  [abs]
  45. Mitani, K. and Massoud, H.Z., Estimation of negative charges in the oxide of SOI materials by wafer bonding technology, Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications (1992), pp. 355 - 64, Phoenix, AZ, USA  [abs]
  46. Mastrototaro, J.J. and Massoud, H.Z. and Pilkington, T.C. and Ideker, R.E., Rigid and flexible thin-film multielectrode arrays for transmural cardiac recording, IEEE Trans. Biomed. Eng. (USA), vol. 39 no. 3 (1992), pp. 271 - 9 [10.125012]  [abs]
  47. Goodwin-Johansson, S.H. and Ray, M. and Yudong Kim and Massoud, H.Z., Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 10 no. 1 (1992), pp. 369 - 79, Research Triangle Park, NC, USA [1.586360]  [abs]
  48. Boyd Rogers, W. and Massoud, H.Z., Determination of the kinetic coefficients of silicon self-interstitials from back-side oxidation/front-surface stacking-fault growth experiments, J. Electrochem. Soc. (USA), vol. 138 no. 11 (1991), pp. 3483 - 91  [abs]
  49. Boyd Rogers, W. and Massoud, H.Z., Determination of the kinetic coefficients of silicon self-interstitials from oxygen precipitation/front-surface stacking-fault growth experiments, J. Electrochem. Soc. (USA), vol. 138 no. 11 (1991), pp. 3492 - 8  [abs]
  50. Deaton, R. and Massoud, H.Z., Effect of thermally induced stresses on the rapid-thermal oxidation of silicon, J. Appl. Phys. (USA), vol. 70 no. 7 (1991), pp. 3588 - 92 [1.349254]  [abs]
  51. Massoud, H.Z. and Sampson, R.K. and Conrad, K.A. and Yao-Zhi Hu and Irene, E.A., Applications of in situ ellipsometry in RTP temperature measurement and process control, Rapid Thermal and Integrated Processing Symposium (1991), pp. 17 - 22, Anaheim, CA, USA  [abs]
  52. Boyd Rogers, W. and Massoud, Hisham Z., Characterization and modeling of the role of silicon self-interstitials (SiI) in stacking-fault growth. II. SiI injection by oxygen precipitation, Proceedings - The Electrochemical Society, vol. 91 no. 4 (1991), pp. 495 - 515, Montreal, Que, Can  [abs]
  53. Deaton, R. and Massoud, H.Z., Response surface analysis of the rapid-thermal oxidation of silicon, Rapid Thermal and Integrated Processing Symposium (1991), pp. 373 - 8, Anaheim, CA, USA  [abs]
  54. Sampson, R.K. and Massoud, H.Z., Simultaneous measurement of wafer temperature and native oxide thickness using in situ ellipsometry, Proceedings of the Third International Symposium on Ultra Large Scale Integration Science and Technology. ULSI Science and Technology 1991 (1991), pp. 574 - 81, Washington, DC, USA  [abs]
  55. Kim, Yudong and Tan, Teh Y. and Massoud, Hisham Z. and Fair, Richard B., Modeling the enhanced diffusion of implanted boron in silicon, Proceedings - The Electrochemical Society, vol. 91 no. 4 (1991), pp. 304 - 320, Montreal, Que, Can  [abs]
  56. Boyd Rogers, W. and Massoud, Hisham Z., Characterization and modeling of the role of silicon self-interstitials (SiI) in stacking-fault growth. I.SiI injection by backside oxidation, Proceedings - The Electrochemical Society, vol. 91 no. 4 (1991), pp. 474 - 494, Montreal, Que, Can  [abs]
  57. Massoud, H.Z. and Sampson, R.K. and Conrad, K.A. and Yao-Zhi Hu and Irene, E.A., Principles of wafer temperature measurement using in situ ellipsometry, Proceedings of the Third International Symposium on Ultra Large Scale Integration Science and Technology. ULSI Science and Technology 1991 (1991), pp. 541 - 50, Washington, DC, USA  [abs]
  58. Kim, Yudong and Massoud, Hisham Z. and Goesele, Ulrich M. and Fair, Richard B., Physical modeling of the time constant of transient enhancement in the diffusion of ion-implanted dopants in silicon, Proceedings - The Electrochemical Society, vol. 91 no. 4 (1991), pp. 254 - 272, Montreal, Que, Can  [abs]
  59. Tsuei, T. W. and Henderson, R. H. and Massoud, H. Z., Optimum preparation and storage of Ag/Cl and Pt black microelectrodes for transmural cardiac recording applications, Proceedings of the Annual Conference on Engineering in Medicine and Biology, vol. 13 no. pt 4 (1991), pp. 1585 - 1586, Orlando, FL, USA  [abs]
  60. Mitani, K. and Lehmann, V. and Stengl, R. and Feijoo, D. and Gosele, U.M. and Massoud, H.Z., Causes and prevention of temperature-dependent bubbles in silicon wafer bonding, Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes (Japan), vol. 30 no. 4 (1991), pp. 615 - 22  [abs]
  61. Vitkavage, S.C. and Irene, E.A. and Massoud, H.Z., An investigation of Si-SiO2 interface charges in thermally oxidized (100), (110), (111), and (511) silicon, J. Appl. Phys. (USA), vol. 68 no. 10 (1990), pp. 5262 - 72 [1.347042]  [abs]
  62. Ward, R.R. and Massoud, H.Z. and Fair, R.B., The thermal oxidation of heavily doped silicon in the thin-film regime: dopant behavior and modeling growth kinetics, Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology: Semiconductor Silicon 1990 (1990), pp. 405 - 16, Montreal, Que., Canada  [abs]
  63. Ash, B. and Massoud, H. Z. and Nagle, H. T. Jr. and Wortman, J. J., Electrode fabrication, Proceedings of the Annual Conference on Engineering in Medicine and Biology no. pt 2 (1990), pp. 681 - 684, Philadelphia, PA, USA  [abs]
  64. Ward, Rufus R. and Massoud, Hisham Z. and Fair, Richard B., Thermal oxidation of heavily doped silicon in the thin-film regime. Dopant behavior and modeling growth kinetics, Proceedings - The Electrochemical Society, vol. 90 no. 7 (1990), pp. 405 - 416, Montreal, Que, Can  [abs]
  65. Massoud, Hisham Z., Silicon oxidation kinetics in the thin-film regime, Conference on Solid State Devices and Materials (1990), pp. 1083 - 1086, Sendai, Jpn  [abs]
  66. Kim, Yudong and Massoud, Hisham Z. and Chevacharoeukul, Sopa and Fair, Richard B., Role of end-of-range dislocation loops as a diffusion barrier, Proceedings - The Electrochemical Society, vol. 90 no. 7 (1990), pp. 437 - 446, Montreal, Que, Can  [abs]
  67. Kim, Y. and Massoud, H.Z. and Chevacharoeukul, S. and Fair, R.B., The role of end-of-range dislocation loops as a diffusion barrier, Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology: Semiconductor Silicon 1990 (1990), pp. 437 - 46, Montreal, Que., Canada  [abs]
  68. Kim, Y. and Massoud, H.Z. and Fair, R.B., The effect of annealing ambient on dopant diffusion in silicon during low-temperature processing, J. Electrochem. Soc. (USA), vol. 137 no. 8 (1990), pp. 2599 - 603  [abs]
  69. Subrahmanyan, R. and Massoud, H.Z. and Fair, R.B., Comparison of measured and simulated two-dimensional phosphorus diffusion profiles in silicon, J. Electrochem. Soc. (USA), vol. 137 no. 5 (1990), pp. 1573 - 9  [abs]
  70. Subrahmanyan, Ravi and Massoud, Hisham Z. and Fair, Richard B., Accurate junction-depth measurements using chemical staining, ASTM Special Technical Publication no. 990 (1989), pp. 126 -
  71. Mastrototaro, John J. and Pilkington, Theo C. and Ideker, Raymond E. and Massoud, Hisham Z., Thin-film flexible multielectrode arrays for voltage measurements in the heart, Proceedings of the Annual Conference on Engineering in Medicine and Biology, vol. 11 pt 1 (1989), pp. 212 -, Seattle, WA, USA  [abs]
  72. Rogers, W.B. and Massoud, H.Z., Transfer of patterns from the backside of a silicon wafer coated with Si3N4 to its front surface during wet oxidation, Appl. Phys. Lett. (USA), vol. 55 no. 2 (1989), pp. 159 - 61 [1.102398]  [abs]
  73. Rogers, W.B. and Massoud, H.Z. and Fair, R.B. and Gosele, U.M. and Tan, T.Y. and Rozgonyi, G.A., The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon, J. Appl. Phys. (USA), vol. 65 no. 11 (1989), pp. 4215 - 19 [1.343303]  [abs]
  74. Goodwin-Johansson, S.H. and Subrahmanyan, R. and Floyd, C.E. and Massoud, H.Z., Two-dimensional impurity profiling with emission computed tomography techniques, IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. (USA), vol. 8 no. 4 (1989), pp. 323 - 35 [43.29587]  [abs]
  75. Yudong Kim and Massoud, H.Z. and Fair, R.B., The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation, J. Electron. Mater. (USA), vol. 18 no. 2 (1989), pp. 143 - 50  [abs]
  76. Kim, Y. and Massoud, H.Z. and Fair, R.B., Boron profile changes during low-temperature annealing of BF2+-implanted silicon, Appl. Phys. Lett. (USA), vol. 53 no. 22 (1988), pp. 2197 - 9 [1.100505]  [abs]
  77. Massoud, H.Z., Charge-transfer dipoles at the Si-SiO2 interface and the metal-semiconductor work function difference in MOS devices, SiO2 and Its Interfaces: Symposium (1988), pp. 265 - 70, Boston, MA, USA  [abs]
  78. Mastrototaro, John J. and Pilkington, Theo C. and Ideker, Raymond E. and Massoud, Hisham Z., Thin-film multielectrode arrays for potential gradient measurements in the heart, IEEE/Engineering in Medicine and Biology Society Annual Conference, vol. 10 no. pt 1 (1988), pp. 90 -, New Orleans, LA, USA  [abs]
  79. Massoud, H.Z., Reverse dopant redistribution during the initial stages of the oxidation of heavily doped silicon in dry oxygen, Appl. Phys. Lett. (USA), vol. 53 no. 6 (1988), pp. 497 - 9 [1.100618]  [abs]
  80. de Lyon, T.J. and Casey, H.C., Jr. and Massoud, H.Z. and Timmons, M.L. and Hutchby, J.A. and Dietrich, H.B., Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions, Appl. Phys. Lett. (USA), vol. 52 no. 26 (1988), pp. 2244 - 6 [1.99544]  [abs]
  81. Subrahmanyan, R. and Massoud, H.Z. and Fair, R.B., Experimental characterization of two-dimensional dopant profiles in silicon using chemical staining, Appl. Phys. Lett. (USA), vol. 52 no. 25 (1988), pp. 2145 - 7 [1.99559]  [abs]
  82. Massoud, H.Z., Charge-transfer dipole moments at the Si-SiO2 interface, J. Appl. Phys. (USA), vol. 63 no. 6 (1988), pp. 2000 - 5 [1.341100]  [abs]
  83. Massoud, H.Z. and Plummer, J.D., Analytical relationship for the oxidation of silicon in dry oxygen in the thin-film regime, J. Appl. Phys. (USA), vol. 62 no. 8 (1987), pp. 3416 - 23 [1.339305]  [abs]
  84. Subrahmanyan, R. and Massoud, H.Z. and Fair, R.B., The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon, J. Appl. Phys. (USA), vol. 61 no. 10 (1987), pp. 4804 - 7 [1.338342]  [abs]
  85. Mastrototaro, J. J. and Massoud, H. Z. and Pilkington, T. C. and Ideker, R. E., VLSI APPROACH FOR CARDIAC MULTIELECTRODE PROBE FABRICATION., IEEE/Engineering in Medicine and Biology Society Annual Conference (1986), pp. 1603 - 1605, Fort Worth, TX, USA  [abs]
  86. Mastrototaro, J.J. and Massoud, H.Z. and Pilkington, T.C. and Ideker, R.E., A VLSI approach for cardiac multielectrode probe fabrication, Proceedings of the Eighth Annual Conference of the IEEE/Engineering in Medicine and Biology Society (Cat. No. 86CH2368-9) (1986), pp. 1603 - 5, Fort Worth, TX, USA  [abs]
  87. Irene, E.A. and Massoud, H.Z. and Tierney, E., Silicon oxidation studies: silicon orientation effects on thermal oxidation, J. Electrochem. Soc. (USA), vol. 133 no. 6 (1986), pp. 1253 - 6  [abs]
  88. Wilson, W.B. and Massoud, H.Z. and Swanson, E.J. and George, R.T., Jr. and Fair, R.B., Measurement and modeling of charge feedthrough in n-channel MOS analog switches, IEEE J. Solid-State Circuits (USA), vol. SC-20 no. 6 (1985), pp. 1206 - 13  [abs]
  89. Massoud, H.Z. and Plummer, J.D. and Irene, E.A., Thermal oxidation of silicon in dry oxygen: growth-rate enhancement in the thin regime. II. Physical Mechanisms, J. Electrochem. Soc. (USA), vol. 132 no. 11 (1985), pp. 2693 - 700  [abs]
  90. Massoud, H.Z. and Plummer, J.D. and Irene, E.A., Thermal oxidation of silicon in dry oxygen growth-rate enhancement in the thin regime. I. Experimental results, J. Electrochem. Soc. (USA), vol. 132 no. 11 (1985), pp. 2685 - 93  [abs]
  91. Manda, Michael L. and Shepard, M. L. and Fair, R. B. and Massoud, H. Z., STRESS-ASSISTED DIFFUSION OF BORON AND ARSENIC IN SILICON., Materials Research Society Symposia Proceedings, vol. 36 (1985), pp. 71 - 76, Boston, MA, USA  [abs]
  92. Manda, M.L. and Shepard, M.L. and Fair, R.B. and Massoud, H.Z., Stress-assisted diffusion of boron and arsenic in silicon, Impurity Diffusion and Gettering in Silicon Symposium (1985), pp. 71 - 6, Boston, MA, USA  [abs]
  93. Massoud, H.Z. and Plummer, J.D. and Irene, E.A., Thermal oxidation of silicon in dry oxygen. Accurate determination of the kinetic rate constants, J. Electrochem. Soc. (USA), vol. 132 no. 7 (1985), pp. 1745 - 53  [abs]
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