Publications [#64676] of Hisham Z. Massoud

Papers Published

1. Massoud, H.Z., The onset of the thermal oxidation of silicon from room temperature to 1000°C [ULSI MOS], Microelectron. Eng. (Netherlands), vol. 28 no. 1-4 (1995), pp. 109 - 16, Villard de Lans, France [0167-9317(95)00026-5]
   (last updated on 2007/04/15)

   Abstract:
   This paper presents experimental results of the onset of SiO₂ growth at high temperatures ranging from 800 to 1000°C, and reviews observations made on the initial stages of silicon oxidation at low temperatures ranging from 300 to 700°C, and native-oxide growth at room temperature. An incubation period of duration T_D, during which the oxide does not grow at the onset of oxidation at all temperatures, is observed. The dependence of the delay T_D on substrate orientation, doping, and oxidation temperature is summarized. A model exploring the influence of SiO formation at the onset of the thermal oxidation of silicon at high temperatures in dry oxygen on the passive-to-active oxidation transition is presented

   Keywords:
   dielectric thin films;integrated circuit technology;MOS integrated circuits;oxidation;silicon compounds;ULSI;