Publications [#64681] of Hisham Z. Massoud

Papers Published

1. Boyd Rogers, W. and Massoud, Hisham Z., Characterization and modeling of the role of silicon self-interstitials (Si_I) in stacking-fault growth. II. Si_I injection by oxygen precipitation, Proceedings - The Electrochemical Society, vol. 91 no. 4 (1991), pp. 495 - 515, Montreal, Que, Can
   (last updated on 2007/04/15)

   Abstract:
   An oxygen precipitation/surface stacking-fault growth experiment was carried out to study the behavior of silicon self-interstitials injected by the precipitation of interstitial oxygen within the bulk of silicon samples. The sample front surfaces were capped with oxide or nitride layers, and the concentration of self-interstitials at the capped surfaces was determined by monitoring the growth or shrinkage of surface stacking faults. The experimental results were analyzed using steady-state and transient models, and estimates for the diffusivity D_I, the equilibrium concentration C_I^eq, and the surface-reaction constant k_I^s(Si₃N₄), and k_I^s(SiO₂) of interstitials at nitride and oxide interfaces were obtained at 1125°C.

   Keywords:
   Crystals - Growing;Oxygen - Precipitation;Surfaces;