Publications [#64686] of Hisham Z. Massoud

Papers Published

1. Goodwin-Johansson, S.H. and Ray, M. and Yudong Kim and Massoud, H.Z., Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 10 no. 1 (1992), pp. 369 - 79, Research Triangle Park, NC, USA [1.586360]
   (last updated on 2007/04/15)

   Abstract:
   Two-dimensional doping profiles can be determined from multiple one-dimensional secondary ion mass spectrometry (SIMS) profiles using computed tomography techniques. The chemical nature of SIMS enables the measurement of both as as-planted and annealed profiles with this technique. Mechanical lapping was done of multiple samples to expose different faces of the substrates followed by one-dimensional SIMS measurements. Doping profiles of 0.4 μm boron junctions have been measured and reconstructed using the maximum likelihood estimation algorithm. Issues of sample alignment, SIMS depth resolution and SIMS sensitivity are discussed with respect to the application of this techinque to sub 100 nm junctions

   Keywords:
   boron;doping profiles;elemental semiconductors;secondary ion mass spectra;semiconductor doping;silicon;