Publications [#64696] of Hisham Z. Massoud

Papers Published

1. Shanware, A. and Shiely, J.P. and Massoud, H.Z. and Vogel, E. and Henson, K. and Srivastava, A. and Osburn, C. and Hauser, J.R. and Wortman, J.J., Extraction of the gate oxide thickness of N- and P-Channel MOSFETs below 20 Å from the substrate current resulting from valence-band electron tunneling, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) (1999), pp. 815 - 18, Washington, DC, USA [IEDM.1999.824274]
   (last updated on 2007/04/15)

   Abstract:
   This paper introduces a method for the determination of the gate oxide thickness, X_ox, of N- and P-Channel MOSFETs with ultrathin oxides based on the characterization and modeling of the substrate current resulting from valence-band electron tunneling (VBET) in the direct-tunneling (DT) regime. Under certain bias conditions, valence-band electron tunneling becomes the main constituent of the substrate currents in N- and P-MOSFETs. This method has several advantages over other methods for the determination of X_ox, and yields values of X_ox that agree well with those obtained from modeling capacitance-voltage characteristics, C(V), while taking quantum-mechanical effects into account. Its main advantage is that it is not limited by the oxide thickness

   Keywords:
   current density;MOSFET;semiconductor device measurement;semiconductor device models;thickness measurement;tunnelling;valence bands;