Publications [#64698] of Hisham Z. Massoud

Papers Published

1. Yudong Kim and Massoud, H.Z. and Fair, R.B., The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation, J. Electron. Mater. (USA), vol. 18 no. 2 (1989), pp. 143 - 50
   (last updated on 2007/04/15)

   Abstract:
   Low-thermal-budget annealing of ion-implanted BF₂⁺, P, and As in Si was studied for shallow-junction formation. Implant doses were sufficient to amorphize the silicon surface region. Low-temperature furnace annealing and rapid-thermal annealing of ion-implanted boron, phosphorus and arsenic in silicon exhibit a transient enhanced diffusion regime resulting in junction depths considerably deeper than expected. The origin of this transient enhanced diffusion is the annealing of ion-implantation damage in the silicon substrate. The authors have found that point-defect generation during the annealing of either shallow end-of-range damage or small clusters of point defects dominates the transient enhanced diffusion process depending upon the annealing temperature and time. The net effect of damage annealing is to reduce the activation energy for dopant diffusion by an amount equal to the activation energy of the supersaturation of point defects in silicon. Models which can describe the transient enhancement characteristics in dopant diffusion during both furnace and rapid-thermal annealing of these implants are discussed

   Keywords:
   annealing;diffusion in solids;elemental semiconductors;ion implantation;p-n homojunctions;point defects;silicon;