Publications [#64704] of Hisham Z. Massoud

Papers Published

1. Deaton, R. and Massoud, H.Z., Response surface analysis of the rapid-thermal oxidation of silicon, Rapid Thermal and Integrated Processing Symposium (1991), pp. 373 - 8, Anaheim, CA, USA
   (last updated on 2007/04/15)

   Abstract:
   A study based on statistical methods generated an empirical model for the response of Rapid-Thermal Oxidation (RTO) to changes in oxidation time, oxidation temperature, and percent Oxygen in the ambient. The experiment was a central composite experimental design which consisted of a 3×3 full-factorial matrix with axial, center, and outlying points added. The design allowed estimation of second order terms in the model. Response surfaces were plotted to visualize the variable effects and interactions. Canonical analysis was performed to determine the fundamental variables involved in the oxidation process

   Keywords:
   elemental semiconductors;incoherent light annealing;oxidation;semiconductor thin films;semiconductor-insulator boundaries;silicon;statistical analysis;