Publications [#64708] of Hisham Z. Massoud

Papers Published

1. Sampson, R.K. and Massoud, H.Z., Simultaneous measurement of wafer temperature and native oxide thickness using in situ ellipsometry, Proceedings of the Third International Symposium on Ultra Large Scale Integration Science and Technology. ULSI Science and Technology 1991 (1991), pp. 574 - 81, Washington, DC, USA
   (last updated on 2007/04/15)

   Abstract:
   The influence of a native oxide layer on the temperature measurement of a silicon wafer using in situ ellipsometry was investigated. This measurement technique is based on determining the index of refraction of silicon (ñ_Si) using ellipsometry, and then inferring the temperature from the known dependence of ñ_Si on T. It was found that for native oxide thicknesses up to 30 Å and for wafer temperatures up to 1100°C, both the oxide thickness and the wafer temperature could be calculated simultaneously either by iterative numerical routines, graphical methods, or polynomial fits. This process can also be applied for oxide thicknesses larger than native oxides. The use of this technique in the monitoring of temperature and growing oxides is discussed

   Keywords:
   ellipsometry;integrated circuit technology;monitoring;silicon;spectral methods of temperature measurement;thickness measurement;