Publications [#64710] of Hisham Z. Massoud

Papers Published

1. Massoud, H.Z., Device physics and simulation of metal/ferroelectric-film/p-type silicon capacitors, Microelectron. Eng. (Netherlands), vol. 36 no. 1-4 (1997), pp. 95 - 8, Stenungsund, Sweden [S0167-9317(97)00023-3]
   (last updated on 2007/04/15)

   Abstract:
   This paper introduces an electrostatic model for Metal/Ferroelectric/Silicon (MFS) capacitors. These structures consist of a metal gate, a dielectric stack which includes a ferroelectric film, and a p-type silicon substrate. The dielectric stack consists of a switching ferroelectric layer and two nonswitching dielectric or buffer layers. This model predicts the dependence of the polarization charge density P_d, the electric field in the ferroelectric film ε_fe, the voltage across the dielectric stack V_OX, the semiconductor surface potential ψ_SC, and the semiconductor charge density Q_SC on the gate-to-bulk voltage V_GB under static conditions. The lowand high-frequency capacitance-voltage characteristics of MFS capacitors are calculated

   Keywords:
   ferroelectric capacitors;MIS capacitors;semiconductor device models;