Publications [#64712] of Hisham Z. Massoud

Papers Published

1. de Lyon, T.J. and Casey, H.C., Jr. and Massoud, H.Z. and Timmons, M.L. and Hutchby, J.A. and Dietrich, H.B., Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions, Appl. Phys. Lett. (USA), vol. 52 no. 26 (1988), pp. 2244 - 6 [1.99544]
   (last updated on 2007/04/15)

   Abstract:
   Planar, Be-implanted p-n junctions were fabricated in GaAs with rapid thermal annealing (RTA). Five second isochronal anneals over a temperature range of 600-1000°C were studied with secondary ion mass spectrometry (SIMS), sheet resistance measurements, and variable diameter p-n junctions. Sheet resistance measurements indicate that a minimum RTA temperature of 600°C is necessary for electrical activation of the implanted Be. SIMS analysis indicates that significant outdiffusion and surface evaporation of Be occur at all RTA temperatures in the range, while indiffusion of Be is insignificant for concentrations below 1×10¹⁸ cm^-3. Forward bias current in diodes ranging in diameter from 10 to 1000 μm is dominated by surface recombination, rather than bulk space-charge recombination, over the entire 600-1000°C temperature range. The magnitude of the surface recombination current is insensitive to the RTA temperature, which suggests that 600°C RTA should be sufficient for the formation of satisfactory p-n junctions

   Keywords:
   annealing;beryllium;electron-hole recombination;gallium arsenide;III-V semiconductors;ion implantation;p-n homojunctions;secondary ion mass spectra;