Publications [#64717] of Hisham Z. Massoud

Papers Published

1. Massoud, H.Z. and Shiely, J.P. and Shanware, A., Self-consistent MOSFET tunneling simulations - trends in the gate and substrate currents and the drain-current turnaround effect with oxide scaling, Materials Research Society Symposium - Proceedings, vol. 567 (1999), pp. 227 - 239, San Francisco, CA, USA
   (last updated on 2007/04/15)

   Abstract:
   This paper discusses the simulation needs of deep-submicron MOSFETs beyond the 100 nm technology generation where the tunneling of carriers through the gate dielectric will become a vital issue in device design, optimization, and characterization. We present simulation results of Tunnel-PISCES, a MOSFET device simulator where tunneling in the gate dielectric is implemented in a self-consistent manner with the device equations in the substrate. Simulation results of trends in the gate, substrate, and drain currents with oxide scaling are presented. The drain-current turnaround effect is explained by considering the role of the voltage drop across the polysilicon gate resistance in determining the device gate tunneling conditions.

   Keywords:
   Electron tunneling;Computer simulation;Electric currents;Semiconductor device structures;Semiconductor device manufacture;Dielectric materials;Charge carriers;Computer aided software engineering;Mathematical models;Semiconductor device models;