Publications [#64719] of Hisham Z. Massoud

Papers Published

1. Shanware, A. and Massoud, H.Z. and Vogel, E. and Henson, K. and Hauser, J.R. and Wortman, J.J., Comparison of valence-band tunneling in pure SiO₂, composite SiO₂/Ta₂O₅, and pure Ta₂O₅, in MOSFETs with 1.0 nm-thick SiO₂-equivalent gate dielectrics, Ultrathin SiO₂ and High-K Materials for ULSI Gate Dielectrics. Symposium (1999), pp. 515 - 20, San Francisco, CA, USA
   (last updated on 2007/04/15)

   Abstract:
   The gate tunneling current in ultrathin gate dielectric NMOSFETs with positive gate bias is due to the tunneling of electrons from the conduction and valence bands of the substrate. Valence-band electrons tunnel from the substrate of NMOS devices when the valence-band edge in the substrate rises above the conduction-band edge in the substrate. This paper reports experimental trends in the contribution of valence-band electrons tunneling to the gate current of NMOSFETs with gate oxides composed of pure SiO₂. The large gate tunneling current can be reduced by replacing the conventional SiO₂ gate dielectric with alternative dielectrics with larger dielectric constants. This paper reports the effect of replacing SiO₂ with alternative dielectrics on the contribution of valence-band electron tunneling to the gate current. Simulations are carried out for composite SiO₂/Ta₂O₅ gate dielectric structures

   Keywords:
   dielectric thin films;MOSFET;silicon compounds;tantalum compounds;tunnelling;valence bands;