Publications [#64720] of Hisham Z. Massoud

Papers Published

1. Shanware, A. and Massoud, H.Z. and Vogel, E. and Henson, K. and Hauser, J.R. and Wortman, J.J., Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO₂ and SiO₂/Ta₂O₅ dielectrics with oxide scaling, Microelectron. Eng. (Netherlands), vol. 48 no. 1-4 , pp. 295 - 8, Koster Banz, Germany [S0167-9317(99)00392-5]
   (last updated on 2007/04/15)

   Abstract:
   Gate oxide scaling in NMOSFETs causes electrons to tunnel from the conduction and valence bands of the silicon substrate in the direct-tunneling regime. In NMOSFETs, the tunneling of electrons from the substrate's valence band is a source of the substrate current I_B and contributes to the gate current I_G. Oxide thickness scaling leads to an increase in the substrate current I_B and in the ratio I_B/I_G of substrate to gate current. In this paper, we report the trends in the I_B/I_G ratio due to oxide thickness scaling in ultrathin SiO₂ and SiO₂/Ta₂O₅ composite gate dielectrics

   Keywords:
   conduction bands;MOSFET;semiconductor device models;silicon compounds;tantalum compounds;tunnelling;valence bands;