Publications [#64722] of Hisham Z. Massoud

Papers Published

1. Conrad, K.A. and Sampson, R.K. and Massoud, H.Z. and Irene, E.A., Ellipsometric monitoring and control of the rapid thermal oxidation of silicon, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 11 no. 6 (1993), pp. 2096 - 101 [1.586548]
   (last updated on 2007/04/15)

   Abstract:
   Single wavelength ellipsometry is demonstrated for in situ process monitoring and control in a rapid thermal processing system. Simultaneous in situ ellipsometric measurements of the temperature and oxide film thickness allow closed-loop feedback control during film growth. Data are presented for the rapid thermal oxidation of silicon under computer control for oxide thickness ranging from 60 to 175 Å and temperatures from 850 to 1000°C

   Keywords:
   closed loop systems;elemental semiconductors;ellipsometry;integrated circuit manufacture;oxidation;process computer control;rapid thermal processing;silicon;temperature control;temperature measurement;thickness control;thickness measurement;