Publications [#64726] of Hisham Z. Massoud

Papers Published

1. Boyd Rogers, W. and Massoud, Hisham Z., Characterization and modeling of the role of silicon self-interstitials (Si_I) in stacking-fault growth. I.Si_I injection by backside oxidation, Proceedings - The Electrochemical Society, vol. 91 no. 4 (1991), pp. 474 - 494, Montreal, Que, Can
   (last updated on 2007/04/15)

   Abstract:
   Backside oxidation/frontside stacking-fault growth experiments were carried out to study the behavior of silicon self-interstitials injected during wet and dry oxidations of the backside of thinned samples. The concentration of self-interstitials at the capped surfaces was monitored by the growth or shrinkage of surface stacking faults. From the analysis of the experimental results, the relative recombination rates of self-interstitials at oxide and nitride boundary layers were obtained, with an oxide layer found to absorb self-interstitials at about three times the rate of a nitride layer. The results also suggest that the surface recombination coefficients are time-dependent rather than constant, as has been previously assumed.

   Keywords:
   Crystals - Growing;Chemical Reactions - Oxidation;