Publications [#64727] of Hisham Z. Massoud

Papers Published

1. Vasudevan, N. and Fair, R.B. and Massoud, H.Z. and Zhao, T. and Look, K. and Karpovich, Y. and Hart, M.J., ON-state reliability of amorphous-silicon antifuses, J. Appl. Phys. (USA), vol. 84 no. 11 (1998), pp. 6440 - 7 [1.368884]
   (last updated on 2007/04/15)

   Abstract:
   The ON state of metal-to-metal amorphous-silicon antifuses suffers from two reliability concerns: switch-off and dc-stress failure. The switch-off current and dc-stress lifetime are strongly dependent on the temperature of the conducting filament and hence, on the programming current and ambient temperature. Numerical simulations of the filament temperature in the ON state were carried out to explain the experimental characteristics obtained in this work such as the dependence of the switch off and dc-stress failures on ambient temperature, stress current, and programming current. The temperature in the conducting filament is found to increase as the square of the stress current. The temperature and power dissipation at switch off are found to be independent of the programming current. The temperature at switch off is determined to be approximately 1500°C. The ON-state device lifetime decreases exponentially with increasing stress current and ambient temperature. Numerical simulations of the temperature in the ON state successfully explain the experimentally observed increase in switch-off currents with programming current and the exponential decrease in device lifetime with increasing programming currents, stress currents, and ambient temperature

   Keywords:
   amorphous semiconductors;electric fuses;electromigration;elemental semiconductors;failure analysis;field programmable gate arrays;semiconductor device reliability;semiconductor switches;silicon;