Publications [#64731] of Hisham Z. Massoud

Papers Published

1. Boyd Rogers, W. and Massoud, H.Z., Determination of the kinetic coefficients of silicon self-interstitials from oxygen precipitation/front-surface stacking-fault growth experiments, J. Electrochem. Soc. (USA), vol. 138 no. 11 (1991), pp. 3492 - 8
   (last updated on 2007/04/15)

   Abstract:
   An oxygen precipitation/surface stacking-fault growth experiment has been carried out to determine the kinetic coefficients of silicon self-interstitials. In this experiment, silicon self-interstitials were injected by the precipitation of interstitial oxygen within the bulk of the silicon samples. The sample front surfaces were capped with oxide or nitride layers, and the concentration of self-interstitials at the capped surfaces were monitored by the growth or shrinkage of surface stacking faults. Experimental results have been analyzed using steady-state and transient models, based on the assumption that self-interstitials dominate the kinetic processes of intrinsic point defects. From these analyses, estimates for the diffusivity D_I, the equilibrium concentration C_I^eq, and the surface-reaction constant k_I^s(Si₃N₄), and k_I^s(SiO₂) at nitride and oxide interfaces were obtained at 1125°C

   Keywords:
   diffusion in solids;elemental semiconductors;interstitials;oxygen;precipitation;silicon;stacking faults;