Publications [#64739] of Hisham Z. Massoud

Papers Published

1. Young, D.R. and Irene, E.A. and Di Maria, D.J. and De Keersmaecker, R.F. and Massoud, H.Z., Electron trapping in SiO₂ at 295 and 77K, J. Appl. Phys. (USA), vol. 50 no. 10 (1979), pp. 6366 - 72 [1.325727]
   (last updated on 2007/04/15)

   Abstract:
   The electron trapping behavior of SiO₂ has been measured as a function of thickness at 295 and 77K. The devices used were metal-oxide-semiconductor devices with the SiO₂ grown thermally. The results indicate bulk traps are dominant at 295K and traps associated with the Si-SiO₂ interface are dominant at 77K. The effect of processing conditions was also studied and the optimum conditions are different for the two temperatures used for the measurements. These observations have been verified using a photo I-V technique. The generation of donor states in the SiO₂ near the Si-SiO₂ interface was observed as a result of the electron current through the SiO₂

   Keywords:
   electron traps;elemental semiconductors;heat treatment;metal-insulator-semiconductor structures;photoconductivity;silicon;silicon compounds;