Publications [#64742] of Hisham Z. Massoud

Papers Published

1. Massoud, Hisham Z., Silicon oxidation kinetics in the thin-film regime, Conference on Solid State Devices and Materials (1990), pp. 1083 - 1086, Sendai, Jpn
   (last updated on 2007/04/15)

   Abstract:
   The present status of silicon oxidation in the thin-film regime is reviewed with emphasis on experimental results and modeling approaches. The effects of temperature, orientation, and dopant concentration in the substrate on the oxidation kinetics are discussed. The observation of a delay in the onset of oxidation at temperatures in the 800-1000°C range is also presented.

   Keywords:
   Semiconducting Films - Thin Films;Semiconductor Devices - Semiconductor Insulator Boundaries;Chemical Reactions - Reaction Kinetics;Thermal Effects;