Publications [#64750] of Hisham Z. Massoud

Papers Published

1. Subrahmanyan, R. and Massoud, H.Z. and Fair, R.B., Experimental characterization of two-dimensional dopant profiles in silicon using chemical staining, Appl. Phys. Lett. (USA), vol. 52 no. 25 (1988), pp. 2145 - 7 [1.99559]
   (last updated on 2007/04/15)

   Abstract:
   An experimental technique for the measurement of two-dimensional impurity diffusion profiles in silicon has been developed. Both the lateral and in-depth extent of dopant diffusion under a mask edge are magnified mechanically by sawing and angle lapping, and the magnified junction contour is delineated by chemical staining. The two-dimensional shape of the junction is reconstructed from the measured stained contour. A complete diffusion profile consisting of several isoconcentration contours can be obtained by measuring the junction shape on a series of samples with increasing substrate resistivities, provided the doping level in the substrate does not affect the diffusion of the impurity under study. Results of the two-dimensional diffusion of boron in silicon at 1050°C are presented

   Keywords:
   boron;diffusion in solids;elemental semiconductors;impurity distribution;silicon;