Publications [#64753] of Hisham Z. Massoud

Papers Published

1. Massoud, H.Z. and Sampson, R.K. and Conrad, K.A. and Yao-Zhi Hu and Irene, E.A., Principles of wafer temperature measurement using in situ ellipsometry, Proceedings of the Third International Symposium on Ultra Large Scale Integration Science and Technology. ULSI Science and Technology 1991 (1991), pp. 541 - 50, Washington, DC, USA
   (last updated on 2007/04/15)

   Abstract:
   The novel use of in situ automated ellipsometry in silicon wafer temperature measurement is introduced. This method is based on determining the ellipsometric parameters ψ and Δ from the measured photomultiplier output obtained by reflection from a silicon substrate at any temperature. From ψ and Δ, the index of refraction of the silicon substrate (ñ_Si) is then calculated, and the temperature is determined from the strong and known temperature dependence of ñ_Si. The complete knowledge of the optical models of film-free and film-covered silicon substrates at processing temperatures gives this non-contact method many advantages over pyrometers and thermocouples. The influence of experimental parameters such as the light wavelength, the precision of the optical components, the angle of incidence, background radiation, the presence of surface films, and the growth or deposition of surface films are discussed

   Keywords:
   elemental semiconductors;ellipsometry;integrated circuit technology;silicon;spectral methods of temperature measurement;