Publications [#64754] of Hisham Z. Massoud

Papers Published

1. Kim, Yudong and Massoud, Hisham Z. and Goesele, Ulrich M. and Fair, Richard B., Physical modeling of the time constant of transient enhancement in the diffusion of ion-implanted dopants in silicon, Proceedings - The Electrochemical Society, vol. 91 no. 4 (1991), pp. 254 - 272, Montreal, Que, Can
   (last updated on 2007/04/15)

   Abstract:
   The supersaturation of point defects in silicon during the annealing of implantation damage causes a transient enhanced diffusion of dopants. A model describing the time constant for the transient enhanced diffusion of implanted dopants was developed based on the annealing characteristics of ion-implantation damage. This study examined self-amorphizing high-dose implants of dopants which generate point-defect clusters distributed throughout the implanted layer and end-of-range (EOR) dislocation loops just beyond the original amorphous/crystalline interface after the regrowth of the surface amorphous layer. The dissolution of point-defect clusters modeled as spheres of self-interstitials exhibits a 4.3 eV activation energy. The annealing of EOR dislocation loops following the dissolution of point-defect clusters is modeled by a process similar to Ostwald's ripening process with the surface acting as a sink for point defects.

   Keywords:
   Phosphorus - Diffusion;Mass Spectrometers;