Publications [#64755] of Hisham Z. Massoud

Papers Published

1. Mitani, K. and Massoud, H.Z., Estimation of negative charges in the oxide of SOI materials by wafer bonding technology, Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications (1992), pp. 355 - 64, Phoenix, AZ, USA
   (last updated on 2007/04/15)

   Abstract:
   The electrical properties of buried oxide layers formed by wafer bonding were characterized by capacitance-voltage (C-V) measurements. In this study, silicon-insulator-silicon (SIS) and metal-oxid-silicon (MOS) capacitors were fabricated on bonded wafers. To analyze C-V curves of SIS structures, C-V simulation programs were developed. From the analysis, the authors conclude that approximately 2×10¹¹/cm² negative charges were distributed uniformly in the oxide probably due to water. The effect of the experimental conditions during wafer bonding on the electrical properties is also discussed

   Keywords:
   capacitance;metal-insulator-semiconductor devices;semiconductor-insulator boundaries;semiconductor-insulator-semiconductor structures;wafer bonding;