Publications [#64757] of Hisham Z. Massoud

Papers Published

1. Massoud, H.Z. and Plummer, J.D., Analytical relationship for the oxidation of silicon in dry oxygen in the thin-film regime, J. Appl. Phys. (USA), vol. 62 no. 8 (1987), pp. 3416 - 23 [1.339305]
   (last updated on 2007/04/15)

   Abstract:
   The oxidation of silicon in dry oxygen is characterized by an initial stage where the growth rate is larger than predicted by the Deal-Grove linear-parabolic general oxidation relationship. This growth-rate enhancement has been studied in the 800-1000°C range by using in situ ellipsometry, and its dependence on the oxidation parameters has been analyzed. The rate enhancement in the thin-film regime is analyzed as a function of oxidation time and is found to fit two terms which decay exponentially with time. These results yield an analytical relationship between the oxide thickness and the oxidation time that describes SiO₂ growth beyond the native oxide. The nature of the additional oxidation mechanisms and their decay with time is discussed

   Keywords:
   elemental semiconductors;ellipsometry;oxidation;silicon;