Publications [#64762] of Hisham Z. Massoud

Papers Published

1. Mitani, K. and Lehmann, V. and Stengl, R. and Feijoo, D. and Gosele, U.M. and Massoud, H.Z., Causes and prevention of temperature-dependent bubbles in silicon wafer bonding, Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes (Japan), vol. 30 no. 4 (1991), pp. 615 - 22
   (last updated on 2007/04/15)

   Abstract:
   Unbonded areas or bubbles generated at the interface of bonded silicon wafers in the temperature range of 200-800°C have been investigated. The experiments described demonstrate that the desorption of hydrocarbon contamination at the silicon wafer surfaces appears to be a necessary condition for the formation of these bubbles. SIMS data also indicate the existence of hydrocarbons at the bonding interface. It is speculated that hydrocarbon gas such as CH₄ is required for bubble nucleation and that either CH₄ or H₂ itself or a mixture of both gases is contained in these bubbles. Finally, methods to prevent the formation of these bubbles are presented

   Keywords:
   bubbles in solids;desorption;elemental semiconductors;semiconductor technology;silicon;surface treatment;