Publications [#64765] of Hisham Z. Massoud

Papers Published

1. Kim, Y. and Massoud, H.Z. and Chevacharoeukul, S. and Fair, R.B., The role of end-of-range dislocation loops as a diffusion barrier, Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology: Semiconductor Silicon 1990 (1990), pp. 437 - 46, Montreal, Que., Canada
   (last updated on 2007/04/15)

   Abstract:
   The effect of end-of-range (EOR) dislocation loops on phosphorus diffusion was studied in the diffusion of P implanted in single-crystal and preamorphized silicon. After annealing at 850°C for 5 to 60 min in an oxidizing ambient, P profiles obtained by secondary-ion mass spectrometry (SIMS) showed that the transient enhanced diffusion of P is absent when the as-implanted phosphorus profile is located within the regrown amorphous layer. It was also found that EOR dislocation loops suppressed the oxidation-enhanced diffusion of phosphorus. It is proposed that the excess point defects generated during the oxidation and the annealing of implant damage were shielded by EOR dislocation loops acting as a diffusion barrier such that both the oxidation-enhanced diffusion and the transient enhancement in diffusivity were minimized

   Keywords:
   annealing;diffusion in solids;dislocation loops;elemental semiconductors;impurity distribution;impurity-dislocation interactions;phosphorus;secondary ion mass spectra;silicon;