Publications [#64768] of Hisham Z. Massoud

Papers Published

1. Shanware, A. and Massoud, H.Z. and Acker, A. and Li, V.Z.-Q. and Mirabedini, M.R. and Henson, K. and Hauser, J.R. and Wortman, J.J., The effects of Ge content in poly-Si_1-xGe gate material on the tunneling barrier in PMOS devices, Microelectron. Eng. (Netherlands), vol. 48 no. 1-4 , pp. 39 - 42, Koster Banz, Germany [S0167-9317(99)00333-0]
   (last updated on 2007/04/15)

   Abstract:
   The use of SiGe gates in MOSFET technology has promise as a single-gate material for both n- and p-channel MOSFETs. The Ge content in the gate, however, affects the gate energy band diagram. While Ge in the SiGe gate does not affect the conduction-band energy level, it is found to raise the valence-band energy level and reduce the gate bandgap. This change results in an increase in the gate current resulting mainly from the tunneling of electrons from the valence band of the gate in PMOSFETs. This paper reports on the effects of Ge content in SiGe gates on the tunneling characteristics of PMOSFETs

   Keywords:
   conduction bands;Ge-Si alloys;interface states;MOSFET;semiconductor device measurement;semiconductor materials;stoichiometry;tunnelling;valence bands;