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Publications of Richard B. Fair    :chronological  alphabetical  combined  bibtex listing:

Papers Published

  1. R. B. Fair and M. A. Shannon and O. K. Tan and O. Geschke and C. H. Ahn and O. Kaynak and M. J. Vellekoop, Introduction for the special issue on sensors for microfluidic analysis systems, Ieee Sensors Journal, vol. 8 no. 5-6 (2008), pp. 427 -- 429, ISSN 1530-437X
  2. L. Luan and R. D. Evans and N. M. Jokerst and R. B. Fair, Integrated optical sensor in a digital microfluidic platform, Ieee Sensors Journal, vol. 8 no. 5-6 (2008), pp. 628 -- 635, ISSN 1530-437X  [abs]
  3. R. B. Fair, Digital microfluidics: is a true lab-on-a-chip possible?, Microfluidics And Nanofluidics, vol. 3 no. 3 (June, 2007), pp. 245 -- 281, ISSN 1613-4982  [abs]
  4. R.B. Fair, Digital Microfluidics: is a true lab-on-a-chip possible?, J. Microfluidics and Nanofluidics, vol. 3 no. 3 (2007), pp. 245-281  [abs]
  5. R.B. Fair, A. Khylstov, T.D. Tailor, V. Ivanov, R.D. Evans, V.Srinivasan, V.K. Pamula, M.G. Pollack, P.B. Griffin, J. Zhou, Chemical and Biological Applications of Digital Microfluidic Devices, IEEE Design and Test of Computers, vol. 25 (2007), pp. 211-223  [abs]
  6. R. B. Fair and A. Khlystov and T. D. Tailor and V. Ivanov and R. D. Evans and P. B. Griffin and V. Srinivasan and V. K. Pamula and M. G. Pollack and J. Zhou, Chemical and biological applications of digital-microfluidic devices, Ieee Design & Test Of Computers, vol. 24 no. 1 (2007), pp. 10 -- 24, ISSN 0740-7475
  7. Su, Fei and Chakrabarty, Krishnendu and Fair, Richard B., Microfluidics-based biochips: Technology issues, implementation platforms, and design-automation challenges, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 25 no. 2 (2006), pp. 211 - 223 [TCAD.2005.855956]  [abs]
  8. Pamula, V.K. and Srinivasan, V. and Chakrapani, H. and Fair, R.B. and Toone, E.J., A droplet-based lab-on-a-chip for colorimetric detection of nitroaromatic explosives, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) (2005), pp. 722 - 725, Miami Beach, FL, United States  [abs]
  9. Srinivasan, Vijay and Pamula, Vamsee and Paik, Phil and Fair, Richard, Protein stamping for maldi mass spectrometry using AN electrowetting-based microfluidic platform, Proceedings of SPIE - The International Society for Optical Engineering, vol. 5591 (2004), pp. 26 - 32, Philadelphia, PA, United States [12.580145]  [abs]
  10. Ren, Hong and Fair, Richard B. and Pollack, Micheal G., Automated on-chip droplet dispensing with volume control by electro-wetting actuation and capacitance metering, Sensors and Actuators, B: Chemical, vol. 98 no. 2-3 (2004), pp. 319 - 327 [030]  [abs]
  11. Zhang, Tianhao and Chakrabarty, Krishnendu and Fair, Richard B., Behavioral modeling and performance evaluation of microelectrofluidics- based PCR systems using systemC, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 23 no. 6 (2004), pp. 843 - 858 [TCAD.2004.828115]  [abs]
  12. Lee, Abraham and Fair, Richard B., Special issue on biomedical applications for MEMS and microfluidics, Proceedings of the IEEE, vol. 92 no. 1 (2004), pp. 3 - 5 [JPROC.2003.820530]
  13. Srinivasan, Vijay and Pamula, Vamsee K. and Fair, Richard B., Droplet-based microfluidic lab-on-a-chip for glucose detection, Analytica Chimica Acta, vol. 507 no. 1 (2004), pp. 145 - 150 [030]  [abs]
  14. Fair, R.B. and Khlystov, A. and Srinivasan, V. and Pamula, V.K. and Weaver, K.N., Integrated chemical/biochemical sample collection, pre-concentration, and analysis on a digital microfluidic lab-on-a-chip platform, Proceedings of SPIE - The International Society for Optical Engineering, vol. 5591 (2004), pp. 113 - 124, Philadelphia, PA, United States [12.581955]  [abs]
  15. Paik, P. and Pamula, V.K. and Fair, R.B., Rapid droplet mixers for digital microfluidic systems, Lab Chip (UK), vol. 3 no. 4 (2003), pp. 253 - 9 [b307628h]  [abs]
  16. Fair, R.B. and Srinivasan, V. and Ren, H. and Paik, P. and Pamula, V.K. and Pollack, M.G., Electrowetting-based on-chip sample processing for integrated microfluidics, IEEE International Electron Devices Meeting 2003 (2003), pp. 32 - 5, Washington, DC, USA [IEDM.2003.1269396]  [abs]
  17. Hong Ren and Srinivasan, V. and Fair, R.B., Design and testing of an interpolating mixing architecture for electrowetting-based droplet-on-chip chemical dilution, TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664), vol. vol.1 (2003), pp. 619 - 22, Boston, MA, USA [SENSOR.2003.1215549]  [abs]
  18. Srinivasan, Vijay and Pamula, Vamsee and Pollack, Michael and Fair, Richard, A digital microfluidic biosensor for multianalyte detection, Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS) (2003), pp. 327 - 330, Kyoto, Japan [MEMSYS.2003.1189752]  [abs]
  19. Zhang, Tianhao and Chakrabarty, Krishnendu and Fair, Richard B., Integrated hierarchical design of microelectrofluidic systems using SystemC, Microelectronics Journal, vol. 33 no. 5-6 (2002), pp. 459 - 470 [S0026-2692(01)00157-4]  [abs]
  20. Pamula, V.K. and Paik, P.Y. and Venkatraman, J. and Pollack, M.G. and Fair, R.B., Microfluidic electrowetting-based droplet mixing, 2001 Microelectromechanical Systems Conference (Cat. No. 01EX521) (2002), pp. 8 - 10, Berkeley, CA, USA [MEMSC.2001.992729]  [abs]
  21. Zhang, Tianhao and Chakrabarty, Krishnendu and Fair, Richard B., System performance evaluation with systemC for two PCR microelectrofluidic systems, 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 (2002), pp. 48 - 53, San Juan, Puerto Rico  [abs]
  22. Zhang, Tianhao and Chakrabarty, Krishnendu and Fair, Richard B., Design of reconfigurable composite microsystems based on hardware/software codesign principles, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 21 no. 8 (2002), pp. 987 - 995 [TCAD.2002.800455]  [abs]
  23. Hong Ren and Fair, R.B., Micro/nano liter droplet formation and dispensing by capacitance metering and electrowetting actuation, Proceedings of the 2002 2nd IEEE Conference on Nanotechnology (Cat. No.02TH8630) (2002), pp. 369 - 72, Washington, DC, USA [NANO.2002.1032267]  [abs]
  24. Ren, Hong and Fair, Richard B. and Pollack, Michael G. and Shaughnessy, Edward J., Dynamics of electro-wetting droplet transport, Sensors and Actuators, B: Chemical, vol. 87 no. 1 (2002), pp. 201 - 206 [S0925-4005(02)00223-X]  [abs]
  25. Pollack, M.G. and Shenderov, A.D. and Fair, R.B., Electrowetting-based actuation of droplets for integrated microfluidics, Lab Chip (UK), vol. 2 no. 2 (2002), pp. 96 - 101 [b110474h]  [abs]
  26. Ding, J. and Chakrabarty, K. and Fair, R.B., Scheduling of microfluidic operations for reconfigurable two-dimensional electrowetting arrays, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 20 no. 12 (2001), pp. 1463 - 1468 [43.969439]  [abs]
  27. Fair, R.B. and Pollack, M.G. and Woo, R. and Pamula, V.K. and Hong, R. and Zhang, T. and Venkatraman, J., A micro-watt metal-insulator-solution-transport (MIST) device for scalable digital bio-microfluidic systems, Technical Digest - International Electron Devices Meeting (2001), pp. 367 - 370, Washington, DC [IEDM.2001.979513]  [abs]
  28. Fair, R.B., A historical view of the role of ion-implantation defects in PN junction formation for devices, Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions II. Symposium (Materials Research Society Proceedings Vol.610) (2001), pp. 4 - 1, San Francisco, CA, USA  [abs]
  29. Srinivasan, Vijay and Jog, Anand and Fair, Richard B., Scalable macromodels for microelectromechanical systems, 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001 (2001), pp. 72 - 75, Hilton Head Island, SC, United States  [abs]
  30. Zhang, T. and Cao, F. and Dewey, A.M. and Fair, R.B. and Chakrabarty, K., Performance analysis of microelectrofluidic systems using hierarchical modeling and simulation, IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, vol. 48 no. 5 (2001), pp. 482 - 491 [82.938358]  [abs]
  31. Ding, Jie and Chakrabarty, Krishnendu and Fair, Richard B., Reconfigurable microfluidic system architecture based on two-dimensional electrowetting arrays, 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001 (2001), pp. 181 - 185, Hilton Head Island, SC, United States  [abs]
  32. Pamula, Vamsee K. and Jog, Anand and Fair, Richard B., Mechanical property measurement of thin-film gold using thermally actuated bimetallic cantilever beams, 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001 (2001), pp. 410 - 413, Hilton Head Island, SC, United States  [abs]
  33. Ren, H. and Jog, A. and Fair, R.B., Statistical optimal design of microelectromechanical system (MEMS), 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001 (2001), pp. 169 - 172, Hilton Head Island, SC, United States  [abs]
  34. Zhang, Tianhao and Chakrabarty, Krishnendu and Fair, Richard B., Design of reconfigurable composite microsystems based on hardware/software co-design principles1, 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001 (2001), pp. 148 - 152, Hilton Head Island, SC, United States  [abs]
  35. Pollack, Michael G. and Fair, Richard B. and Shenderov, Alexander D., Electrowetting-based actuation of liquid droplets for microfluidic applications, Applied Physics Letters, vol. 77 no. 11 (2000), pp. 1725 - 1726 [1.1308534]  [abs]
  36. Pamula, Vamsee K. and Fair, Richard B., Detection of dissolved TNT and DNT in soil with a MEMS explosive particle detector, Proceedings of SPIE - The International Society for Optical Engineering, vol. 4038 (I) (2000), pp. 547 - 552, Orlando, FL, USA [12.396283]  [abs]
  37. Fair, R.B., A historical view of the role of ion-implantation defects in PN junction formation for devices, Materials Research Society Symposium - Proceedings, vol. 610 (2000), pp. 4 - 1, San Francisco, CA  [abs]
  38. Pamula, Vamsee K. and Fair, Richard B., Detection of nanogram explosive particles with a MEMS sensor, Proceedings of SPIE - The International Society for Optical Engineering, vol. 3710 no. I (1999), pp. 321 - 327, Orlando, FL, USA [12.357055]  [abs]
  39. Fair, Richard B., Anomalous B penetration through ultrathin gate oxides during rapid thermal annealing, IEEE Electron Device Letters, vol. 20 no. 9 (1999), pp. 466 - 469 [55.784454]  [abs]
  40. Vasudevan, N. and Massoud, H.Z. and Fair, R.B., Thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses, Journal of the Electrochemical Society, vol. 146 no. 4 (1999), pp. 1536 - 1539 [1.1391800]  [abs]
  41. Wu, Y. and Niimi, H. and Yang, H. and Lucovsky, G. and Fair, R.B., Suppression of boron transport out of p+ polycrystalline silicon at polycrystalline silicon dielectric interfaces, J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA), vol. 17 no. 4 (1999), pp. 1813 - 22, San Diego, CA, USA [1.590832]  [abs]
  42. Fair, R.B. and Pollack, M. and Pamula, V., MEMS devices for detecting the presence of explosive material residues in mine fields, Proc. SPIE - Int. Soc. Opt. Eng. (USA), vol. 3392 (1998), pp. 409 - 17, Orlando, FL, USA [12.324214]  [abs]
  43. Fair, R.B. and Li, S., Photonic effects in the deactivation of ion implanted arsenic, Journal of Applied Physics, vol. 83 no. 8 (1998), pp. 4081 - [1.367228]
  44. Fair, Richard B., History of some early developments in ion-implantation technology leading to silicon transistor manufacturing, Proceedings of the IEEE, vol. 86 no. 1 (1998), pp. 111 - 137 [5.658764]  [abs]
  45. Vasudevan, N. and Fair, R.B. and Massoud, H.Z., Energy considerations during the growth of a molten filament in metal-to-metal amorphous-silicon antifuses, Journal of Applied Physics, vol. 84 no. 9 (1998), pp. 4979 - [1.368743]
  46. Vasudevan, N. and Fair, R.B. and Massoud, H.Z. and Zhao, T. and Look, K. and Karpovich, Y. and Hart, M.J., ON-state reliability of amorphous-silicon antifuses, Journal of Applied Physics, vol. 84 no. 11 (1998), pp. 6440 - [1.368884]
  47. Tsuei, T.W. and Wood, R.L. and Malek, C.K. and Donnelly, M.M. and Fair, R.B., Tapered microvalves fabricated by off-axis X-ray exposures, Microsyst. Technol. (Germany), vol. 4 no. 4 (1998), pp. 201 - 4 [s005420050131]  [abs]
  48. Bobbio, S.M. and Smith, S.W. and Goodwin-Johansson, S. and Fair, R.B. and DuBois, T.D. and Tranjan, F.M. and Hudak, J. and Gupta, R. and Makki, H., Integrated force array: interface to external systems, Proc. SPIE - Int. Soc. Opt. Eng. (USA), vol. 3046 (1997), pp. 248 - 59, San Diego, CA, USA  [abs]
  49. Chen, G. and Borca-Tasciuc, T. and Fair, R.B., Photon effect on radiative properties of silicon during rapid thermal processing, Journal of Applied Physics, vol. 82 no. 2 (1997), pp. 830 - [1.365780]
  50. Fair, R.B., Boron penetration of thin polysilicon gates/ultrathin gate dielectrics from B+ implantation and thermal processing, Proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. ULSI Science and Technology 1997 (1997), pp. 247 - 61, Montreal, Que., Canada  [abs]
  51. Fair, Richard B., Physical models of boron diffusion in ultrathin gate oxides, Journal of the Electrochemical Society, vol. 144 no. 2 (1997), pp. 708 - 717  [abs]
  52. Fair, R.B. and Shen, M., Ultra-shallow 2D dopant profile simulation versus experimental measurement in the low thermal budget regime, Measurement, Characterization and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (1997), pp. 3 - 1, Research Triangle Park, NC, USA  [abs]
  53. Fair, Richard B., Modeling boron diffusion in ultrathin nitrided oxide p+ Si gate technology, IEEE Electron Device Letters, vol. 18 no. 6 (1997), pp. 244 - 247 [55.585342]  [abs]
  54. Fair, Richard B. and Pamula, Vamsee and Pollack, Michael, MEMS-based explosive particle detection and remote particle stimulation, Proceedings of SPIE - The International Society for Optical Engineering, vol. 3079 (1997), pp. 671 - 679, Orlando, FL, USA [12.280896]  [abs]
  55. Proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. ULSI Science and Technology 1997, edited by Massoud, H.Z.;Iwai, H.;Claeys, C.;Fair, R.B.; (1997), pp. xiii+664 -, Montreal, Que., Canada  [abs]
  56. Fair, R.B., Rapid thermal annealing issues in silicon processing, Transient Thermal Processing Techniques in Electronic Materials. Proceedings of Symposium held during the 1996 TMS Annual Meeting (1996), pp. 61 - 6, Anaheim, CA, USA  [abs]
  57. Fair, R.B., Boron diffusion in ultrathin silicon dioxide layers, Proceedings of the Third International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 3 1996 (1996), pp. 200 - 13, Los Angeles, CA, USA  [abs]
  58. Fair, R.B. and Richards, W., Process simulation of dopant atom diffusion in SiO2, Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology (1996), pp. 179 - 94, Los Angeles, CA, USA  [abs]
  59. Bobbio, Stephen M. and Goodwin-Johansson, Scott and DuBois, Thomas D. and Tranjan, Farid M. and Smith, Stephen W. and Fair, Richard B. and Ball, Christian and Jacobson, James and Bartlett, Charles and Eleyan, Nadeem and Makki, H. and Gupta, R., Integrated force array: positioning drive applications, Proceedings of SPIE - The International Society for Optical Engineering, vol. 2722 (1996), pp. 123 - 134, San Diego, CA, USA [12.240436]  [abs]
  60. Fair, Richard B. and Gafiteanu, Roman A., Modeling boron diffusion in thin-oxide p+ Si gate technology, IEEE Electron Device Letters, vol. 17 no. 11 (1996), pp. 497 - 499 [55.541760]  [abs]
  61. Fair, Richard B., Oxide thickness effect on boron diffusion in thin oxide p+ Si gate technology, IEEE Electron Device Letters, vol. 17 no. 5 (1996), pp. 242 - 243 [55.491842]  [abs]
  62. Fair, Richard B., Unified model of boron diffusion in thin gate oxides: effects of F, H2, N, oxide thickness and injected Si interstitials, Technical Digest - International Electron Devices Meeting (1995), pp. 85 - 88, Washington, DC, USA [IEDM.1995.497188]  [abs]
  63. Mirabedini, M.R. and Goodwin-Johansson, S.H. and Massoud, H.Z. and Fair, R.B., Subquarter-micrometre elevated source-and-drain MOSFET structure using polysilicon spacers, Electronics Letters, vol. 30 no. 19 (1994), pp. 1631 - 1632 [el:19941068]  [abs]
  64. Fair, Richard B., Junction formation in silicon by rapid thermal annealing, Materials Research Society Symposium Proceedings, vol. 300 (1993), pp. 545 - 558, San Francisco, CA, USA  [abs]
  65. Fair, R.B. and Turlik, I., Proof-of-concept collaboration model for advanced packaging research at MCNC, Proceedings. International Conference and Exhibition. Multichip Modules (SPIE Proc. vol.1986) (1993), pp. 552 - 6, Denver, CO, USA  [abs]
  66. Neuman, Michael R. and Fair, Richard B. and Mehragany, Mehran and Massoud, Hisham Z., Microelectromechanical systems: a new technology for biomedical applications, Proceedings of the Annual Conference on Engineering in Medicine and Biology, vol. 15 no. pt 3 (1993), pp. 1545 - 1546, San Diego, CA, USA  [abs]
  67. Fair, R.B.E. and Preston, L.E., Engineering Research Centers: goals and results, Proc. IEEE (USA), vol. 81 no. 1 (1993), pp. 3 - 9  [abs]
  68. Fair, Richard B. and Freedman, James F., Technology transfer utilizing the proof-of-concept facility (1992), pp. 66 - 68, Boston, MA, USA  [abs]
  69. Kim, Yudong and Tan, Teh Y. and Massoud, Hisham Z. and Fair, Richard B., Modeling the enhanced diffusion of implanted boron in silicon, Proceedings - The Electrochemical Society, vol. 91 no. 4 (1991), pp. 304 - 320, Montreal, Que, Can  [abs]
  70. Kim, Yudong and Massoud, Hisham Z. and Goesele, Ulrich M. and Fair, Richard B., Physical modeling of the time constant of transient enhancement in the diffusion of ion-implanted dopants in silicon, Proceedings - The Electrochemical Society, vol. 91 no. 4 (1991), pp. 254 - 272, Montreal, Que, Can  [abs]
  71. Fair, R.B. and Kim, Y., Defects induced in silicon during ion implantation and rapid thermal annealing, Proceedings of the Second Symposium on Defects in Silicon. Defects in Silicon II (1991), pp. 423 - 40, Washington, DC, USA  [abs]
  72. Fair, Richard B. and Gardner, Carl L. and Johnson, Michael J. and Kenkel, Stephen W. and Rose, Donald J. and Rose, John E. and Subrahmanyan, Ravi, Two-dimensional process simulation using verified phenomenological models, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 10 no. 5 (1991), pp. 643 - 651 [43.79501]  [abs]
  73. Fair, R.B., Challenges and priorities for two dimensional process simulation, Proceedings - The Electrochemical Society, vol. 91 no. 4 (1991), pp. 689 - 702, Montreal, Que, Can  [abs]
  74. Ward, R.R. and Massoud, H.Z. and Fair, R.B., The thermal oxidation of heavily doped silicon in the thin-film regime: dopant behavior and modeling growth kinetics, Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology: Semiconductor Silicon 1990 (1990), pp. 405 - 16, Montreal, Que., Canada  [abs]
  75. Subrahmanyan, Ravi and Massoud, Hisham Z. and Fair, Richard B., Comparison of measured and simulated two-dimensional phosphorus diffusion profiles in silicon, Journal of the Electrochemical Society, vol. 137 no. 5 (1990), pp. 1573 - 1579  [abs]
  76. Ward, Rufus R. and Massoud, Hisham Z. and Fair, Richard B., Thermal oxidation of heavily doped silicon in the thin-film regime. Dopant behavior and modeling growth kinetics, Proceedings - The Electrochemical Society, vol. 90 no. 7 (1990), pp. 405 - 416, Montreal, Que, Can  [abs]
  77. Kim, Yudong and Massoud, Hisham Z. and Fair, Richard B., Effect of annealing ambient on dopant diffusion in silicon during low-temperature processing, Journal of the Electrochemical Society, vol. 137 no. 8 (1990), pp. 2599 - 2603  [abs]
  78. Fair, Richard B., Damage removal/dopant diffusion tradeoffs in ultra-shallow implanted p+-n junctions, IEEE Transactions on Electron Devices, vol. 37 no. 10 (1990), pp. 2237 - 2242 [16.59914]  [abs]
  79. Fair, Richard B., Process model for simulating the effect of amorphizing implants on phosphorus diffusion, Proceedings - The Electrochemical Society, vol. 90 no. 7 (1990), pp. 429 - 436, Montreal, Que, Can  [abs]
  80. Fair, Richard B. and Ruggles, Gary A., Thermal budget issues for deep submicron ULSI, Solid State Technology, vol. 33 no. 5 (1990), pp. 107 - 113  [abs]
  81. Fair, Richard B., Point defect charge-state effects on transient diffusion of dopants in Si, Journal of the Electrochemical Society, vol. 137 no. 2 (1990), pp. 667 - 671  [abs]
  82. Kim, Yudong and Massoud, Hisham Z. and Chevacharoeukul, Sopa and Fair, Richard B., Role of end-of-range dislocation loops as a diffusion barrier, Proceedings - The Electrochemical Society, vol. 90 no. 7 (1990), pp. 437 - 446, Montreal, Que, Can  [abs]
  83. Fair, Richard B., Challenges to manufacturing submicron, ultra-large scale integrated circuits, Proceedings of the IEEE, vol. 78 no. 11 (1990), pp. 1687 - 1705 [5.63298]  [abs]
  84. Fair, R.B., Process model for simulating the effect of amorphizing implants on phosphorus diffusion, Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology: Semiconductor Silicon 1990 (1990), pp. 429 - 36, Montreal, Que., Canada  [abs]
  85. Fair, Richard B., Diffusion and oxidation of silicon, Advances in Chemistry Series no. 221 (1989), pp. 265 - 323  [abs]
  86. Fair, R.B. and Subrahmanyan, R., Phenomenological versus point-defect-based process modeling. Where should you put your money?, Proceedings - The Electrochemical Society, vol. 89 no. 9 (1989), pp. 133 -, Los Angeles, CA, USA
  87. Fair, Richard B., Role of transient damage annealing in shallow junction formation, Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. B37-38 no. 1-2 (1989), pp. 371 - 378, Kyoto, Jpn [0168-583X(89)90206-1]  [abs]
  88. Subrahmanyan, Ravi and Massoud, Hisham Z. and Fair, Richard B., Accurate junction-depth measurements using chemical staining, ASTM Special Technical Publication no. 990 (1989), pp. 126 -
  89. Fair, Richard B., Shallow junctions--Modeling the dominance of point defect charge states during transient diffusion, Technical Digest - International Electron Devices Meeting (1989), pp. 691 - 694, Washington, DC, USA [IEDM.1989.74373]  [abs]
  90. Kim, Yudong and Massoud, Hisham Z. and Fair, Richard B., Effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation, Journal of Electronic Materials, vol. 18 no. 2 (1989), pp. 143 - 150  [abs]
  91. Rogers, W.B. and Massoud, H.Z. and Fair, R.B. and Gosele, U.M. and Tan, T.Y. and Rozgonyi, G.A., The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon, J. Appl. Phys. (USA), vol. 65 no. 11 (1989), pp. 4215 - 19 [1.343303]  [abs]
  92. Kim, Y. and Massoud, H.Z. and Fair, R.B., Boron profile changes during low-temperature annealing of BF2+-implanted silicon, Appl. Phys. Lett. (USA), vol. 53 no. 22 (1988), pp. 2197 - 9 [1.100505]  [abs]
  93. Fair, Richard B., LOW-THERMAL-BUDGET PROCESS MODELING WITH THE PREDICT COMPUTER PROGRAM., IEEE Transactions on Electron Devices, vol. 35 no. 3 (1988), pp. 285 - 293 [2452]  [abs]
  94. Subrahmanyan, R. and Massoud, H.Z. and Fair, R.B., Experimental characterization of two-dimensional dopant profiles in silicon using chemical staining, Appl. Phys. Lett. (USA), vol. 52 no. 25 (1988), pp. 2145 - 7 [1.99559]  [abs]
  95. Ajmera, A.C. and Rozgonyi, G.A. and Fair, R.B., Point defect/dopant diffusion considerations following preamorphization of silicon via Si+ and Ge+ implantation, Appl. Phys. Lett. (USA), vol. 52 no. 10 (1988), pp. 813 - 15 [1.99292]  [abs]
  96. Fair, R.B. and Rose, J.E., A deep decision tree approach to modeling submicron silicon technologies, IEEE International Conference on Computer-Aided Design: ICCAD-87. Digest of Technical Papers (Cat. No.87CH2469-5) (1987), pp. 248 - 51, Santa Clara, CA, USA  [abs]
  97. Fair, Richard B. and Rose, John E., PROCESS SIMULATION OF SUBMICRON TECHNOLOGIES., Semiconductor International, vol. 10 no. 13 (1987), pp. 72 - 75  [abs]
  98. Tsai, J. C. C. and Schimmel, D. G. and Fair, R. B. and Maszara, W., POINT DEFECT GENERATION DURING PHOSPHORUS DIFFUSION IN SILICON. I. CONCENTRATIONS ABOVE SOLID SOLUBILITY., Journal of the Electrochemical Society, vol. 134 no. 6 (1987), pp. 1508 - 1518  [abs]
  99. Fair, R.B., Process models for ultra-shallow junction technologies, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5) (1987), pp. 260 - 3, Washington, DC, USA  [abs]
  100. Morehead, F.F. and Fair, R.B., Comment on `The diffusion of antimony in heavily doped and (sic) n- and p-type silicon' [J. Mater. Res. 1, 705 (1986)], J. Mater. Res. (USA), vol. 2 no. 4 (1987), pp. 538 - 41  [abs]
  101. Subrahmanyan, R. and Massoud, H.Z. and Fair, R.B., The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon, J. Appl. Phys. (USA), vol. 61 no. 10 (1987), pp. 4804 - 7 [1.338342]  [abs]
  102. Fair, R.B., Modeling of dopant diffusion during rapid thermal annealing, J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol. 4 no. 3 (1986), pp. 926 - 32, Houston, TX, USA [1.573758]  [abs]
  103. Manda, M.L. and Shepard, M.L. and Fair, R.B. and Massoud, H.Z., Stress-assisted diffusion of boron and arsenic in silicon, Impurity Diffusion and Gettering in Silicon Symposium (1985), pp. 71 - 6, Boston, MA, USA  [abs]
  104. Fair, R.B., Impurity diffusion during RTA, Energy Beam-Solid Interactions and Transient Thermal Processing/1984 Symposium (1985), pp. 381 - 92, Boston, MA, USA  [abs]
  105. Fair, R. B. and Subrahmanyan, R., PREDICT - A NEW DESIGN TOOL FOR SHALLOW JUNCTION PROCESSES., Proceedings of SPIE - The International Society for Optical Engineering, vol. 530 (1985), pp. 88 - 96, Los Angeles, CA, USA  [abs]
  106. Fair, R.B., Observation of vacancies and self-interstitials in diffusion experiments in silicon, Thirteenth International Conference on Defects in Semiconductors (1985), pp. 173 - 85, Coronado, CA, USA  [abs]
  107. Fair, R. B. and Cook, R. C. and Wortman, J. J., CURVE FITTING MODELS FOR BORON, PHOSPHORUS AND ARSENIC ION IMPLANTATIONS IN CRYSTALLINE SILICON., Electrochemical Society Extended Abstracts, vol. 85-1 (1985), pp. 371 - 372, Toronto, Ont, Can  [abs]
  108. Manda, Michael L. and Shepard, M. L. and Fair, R. B. and Massoud, H. Z., STRESS-ASSISTED DIFFUSION OF BORON AND ARSENIC IN SILICON., Materials Research Society Symposia Proceedings, vol. 36 (1985), pp. 71 - 76, Boston, MA, USA  [abs]
  109. Wilson, William B. and Massoud, Hisham Z. and Swanson, Eric J. and George, Rhett T. Jr. and Fair, Richard B., MEASUREMENT AND MODELING OF CHARGE FEEDTHROUGH IN N-CHANNEL MOS ANALOG SWITCHES., IEEE Journal of Solid-State Circuits, vol. SC-20 no. 6 (1985), pp. 1206 - 1213 [JSSC.1985.1052460]  [abs]
  110. Impurity Diffusion and Gettering in Silicon Symposium, edited by Fair, R.B.;Pearce, C.W.;Washburn, J.; (1985), pp. xiii+284 -, Boston, MA, USA  [abs]
  111. Fair, R.B. and Subrahmanyan, R., PREDICT-a new design tool for shallow junction processes, Proc. SPIE - Int. Soc. Opt. Eng. (USA), vol. 530 (1985), pp. 88 - 96, Los Angeles, CA, USA  [abs]
  112. IMPURITY DIFFUSION AND GETTERING IN SILICON., edited by Fair, Richard B.;Pearce, Charles W.;Washburn, Jack;, Materials Research Society Symposia Proceedings, vol. 36 (1985), pp. 284 -, Boston, MA, USA  [abs]
  113. Fair, R.B., The role of vacancies and self-interstitials in impurity diffusion in silicon, Diffus. Defect Data (Switzerland), vol. 37 (1984), pp. 1 - 24  [abs]
  114. Rogers, B. and Fair, R. B. and Dyson, W. and Rozgonyi, G. A., COMPUTER SIMULATION OF OXYGEN PRECIPITATION AND DENUDED ZONE FORMATION., Proceedings - The Electrochemical Society, vol. 84-7 (1984), pp. 74 - 84, Cincinatti, OH, USA  [abs]
  115. Rogers, B. and Fair, R.B. and Dyson, W. and Rozgony, G.A., Computer simulation of oxygen precipitation and denuded zone formation, VLSI Science and Technology-1984. Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology. Materials for High Speed/High Density Applications (1984), pp. 74 - 84, Cincinnati, OH, USA  [abs]
  116. Fair, Richard B. and Wortman, Jimmie J. and Liu, Jiann and Tischler, Mike and Masnari, Nino A., MODELING PHYSICAL LIMITATIONS ON JUNCTION SCALING FOR CMOS., IEEE Transactions on Electron Devices, vol. ED-31 no. 9 (1984), pp. 1180 - 1185  [abs]
  117. Fair, R. B. and Wortman, J. J. and Liu, J., MODELING RAPID THERMAL DIFFUSION OF ARSENIC AND BORON IN SILICON., Journal of the Electrochemical Society, vol. 131 no. 10 (1984), pp. 2387 - 2394  [abs]
  118. Bell, T.E. and Moto-oka, T. and Fischetti, M.A. and Cooper, R.S. and Kahn, R.E. and Bloch, E. and Meindl, J.D. and Fair, R.B. and Oakley, B.W. and Nasko, H., The teams and the players [fifth-generation computers], IEEE Spectr. (USA), vol. 20 no. 11 (1983), pp. 45 - 72  [abs]
  119. Fair, R.B. and Meyer, W.G., Modeling anomalous junction formation in silicon by the codiffusion of implanted arsenic with phosphorus, Silicon Processing (1983), pp. 290 - 305, San Jose, CA, USA  [abs]
  120. Fair, R.B., Impurity concentration doping effects on impurity diffusion in silicon, SEMICON/EUROPA 1983. Semiconductor Processing and Equipment Symposium (1983), pp. 230 - 7, Zurich, Switzerland  [abs]
  121. Fair, Richard B., MODELING OF DOPANT DIFFUSION AND ASSOCIATED EFFECTS IN SILICON., Materials Research Society Symposia Proceedings, vol. 14 (1983), pp. 61 - 74, Boston, Mass, USA
  122. Fair, R.B., MCNC-a new multi-institutional thrust in manufacturing technology research [for semiconductor ICs], UGIM-83 Proceedings. 1983 University/Government/Industry Microelectronics Symposium (1983), pp. 10 - 12, College Station, TX, USA  [abs]
  123. Fair, R. B., EFFECTS OF IMPURITY DIFFUSION AND SURFACE DAMAGE ON OXYGEN PRECIPITATION IN SILICON., Journal of Applied Physics, vol. 54 no. 1 (1983), pp. 388 - 391 [1.331714]  [abs]
  124. Fair, R.B., Modeling of dopant diffusion and associated effects in silicon, Defects in Semiconductors II, Symposium Proceedings (1983), pp. 61 - 74, Boston, MA, USA  [abs]
  125. Fair, R.B. and Wortman, J.J. and Liu, J., Modeling rapid thermal annealing processes for shallow junction formation in silicon, International Electron Devices Meeting 1983. Technical Digest (1983), pp. 658 - 61, Washington, DC, USA  [abs]
  126. Meyer, William G. and Fair, Richard B., DYNAMIC BEHAVIOR OF THE BUILDUP OF FIXED CHARGE AND INTERFACE STATES DURING HOT-CARRIER INJECTION IN ENCAPSULATED MOSFET's., IEEE Transactions on Electron Devices, vol. ED-30 no. 2 (1983), pp. 96 - 103  [abs]
  127. Fair, Richard B., SILICON PROCESS BALANCING ACT FOR VLSI., Solid State Technology, vol. 25 no. 4 (1982), pp. 220 - 226  [abs]
  128. FAIR, R. B. and CARIM, A., ON THE DOPING DEPENDENCE OF OXIDATION-INDUCED STACKING FAULT SHRINKAGE IN SILICON., vol. 129 no. 10 (1982), pp. 2319 - 2321  [abs]
  129. Fair, R. B., OXIDATION, IMPURITY DIFFUSION, AND DEFECT GROWTH IN SILICON EM DASH AN OVERVIEW., Journal of the Electrochemical Society, vol. 128 no. 6 (1981), pp. 1360 - 1368  [abs]
  130. Fair, R.B., Concentration profiles of diffused dopants in silicon (1981), pp. 315 - 442  [abs]
  131. Fair, Richard B. and Sun, Robert C., THRESHOLD-VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT-HOLE EMISSION., IEEE Transactions on Electron Devices, vol. ED-28 no. 1 (1981), pp. 83 - 94  [abs]
  132. Fair, R. B., MODELING ANOMALOUS PHENOMENA IN ARSENIC DIFFUSION IN SILICON., Proceedings - The Electrochemical Society, vol. 81-5 (1981), pp. 963 - 978, Minneapolis, MN, USA
  133. Fair, R.B., Molecular transport and diffusion in solids, Sens. Actuators (Switzerland), vol. 1 no. 3 (1981), pp. 305 - 28 [0250-6874(81)80013-3]  [abs]
  134. Fair, R. B., ON THE ROLE OF SELF-INTERSTITIALS IN IMPURITY DIFFUSION IN SILICON., Journal of Applied Physics, vol. 51 no. 11 (1980), pp. 5828 - 5832 [1.327540]  [abs]
  135. Fair, R.B. and Sun, R.C., Threshold voltage instability in MOSFETs due to channel hot hole emission, International Electron Devices Meeting. Technical Digest (1980), pp. 746 - 9, Washington, DC, USA  [abs]
  136. Fair, R.B., Modeling laser-induced diffusion of implanted arsenic in silicon, J. Appl. Phys. (USA), vol. 50 no. 10 (1979), pp. 6552 - 5 [1.325716]  [abs]
  137. Fair, R.B., Effect of strain-induced band-gap narrowing on E-centre concentrations in Si, International Conference on Defects and Radiation Effects in Semiconductors (1979), pp. 559 - 65, Nice, France  [abs]
  138. Fair, Richard B., THE EFFECT OF STRAIN-INDUCED BAND-GAP NARROWING ON HIGH CONCENTRATION PHOSPHORUS DIFFUSION IN SILICON., Journal of Applied Physics, vol. 50 no. 2 (1979), pp. 860 - 868 [1.326001]  [abs]
  139. Fair, R.B. and Tsai, J.C.C., Theory and direct measurement of boron segregation in SiO2 during dry, near dry, and wet O2 oxidation, J. Electrochem. Soc. (USA), vol. 25 no. 12 (1978), pp. 2050 - 8  [abs]
  140. Fair, R.B., Quantified conditions for emitter-misfit dislocation formation in silicon, J. Electrochem. Soc. (USA), vol. 125 no. 6 (1978), pp. 923 - 6  [abs]
  141. Fair, R.B., Analysis of phosphorus-diffused layers in silicon, J. Electrochem. Soc. (USA), vol. 125 no. 2 (1978), pp. 323 - 7  [abs]
  142. Fair, R.B., Recent advances in implantation and diffusion modeling for the design and process control of bipolar ICs, Electrochemical Society Spring Meeting (papers in extended summary form only received) (1977), pp. 598 - 600, Philadelphia, PA, USA  [abs]
  143. Fair, R.B. and Tsai, J.C.C., A quantitative model for the diffusion of phosphorus in silicon and the emitter dip effect, J. Electrochem. Soc. (USA), vol. 124 no. 7 (1977), pp. 1107 - 18  [abs]
  144. Fair, R.B. and Wivell, H.W., Zener and avalanche breakdown in As-implanted low-voltage Si n-p junctions, IEEE Trans. Electron Devices (USA), vol. ED-23 no. 5 (1976), pp. 512 - 18  [abs]
  145. Fair, R.B. and Tsai, J.C.C., Profile parameters of implanted-diffused arsenic layers in silicon, J. Electrochem. Soc. (USA), vol. 123 no. 4 (1976), pp. 583 - 6  [abs]
  146. Fair, R.B., Transistor design considerations for low-noise preamplifiers, IEEE Trans. Nucl. Sci. (USA), vol. ns-23 no. 1 (1976), pp. 218 - 25, San Francisco, CA, USA  [abs]
  147. Fair, R.B. and Tsai, J.C.C., The diffusion of ion-implanted arsenic in silicon, Electrochemical Society Fall Meeting (Extended abstracts only received) (1975), pp. 464 - 6, Dallas, TX, USA  [abs]
  148. Fair, R.B. and Pappas, P.N., Diffusion of ion-implanted boron in high concentration P, Sb, and As doped silicon, Electrochemical Society Spring Meeting. (Extended abstracts) (1975), pp. 397 - 9, Toronto, Ont., Canada  [abs]
  149. Fair, Richard B., BORON DIFFUSION IN SILICON EM DASH CONCENTRATION AND ORIENTATION DEPENDENCE, BACKGROUND EFFECTS, AND PROFILE ESTIMATION., Journal of the Electrochemical Society, vol. 122 no. 6 (1975), pp. 800 - 805  [abs]
  150. Fair, Richard B. and Pappas, Paul N., GETTERING OF BORON BY AN ION-IMPLANTED ANTIMONY LAYER IN SILICON., Solid-State Electronics, vol. 18 no. 12 (1975), pp. 1131 - 1134 [0038-1101(75)90179-3]  [abs]
  151. Fair, Richard B. and Tsai, Joseph C. C., DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON., Journal of the Electrochemical Society, vol. 122 no. 12 (1975), pp. 1689 - 1696  [abs]
  152. Fair, R.B. and Wivell, H.W., Zener and avalanche breakdown in As-implanted, low-voltage Si n-p junctions, 1975 International Electron Devices Meeting. (Technical digest) (1975), pp. 455 - 8, Washington, DC, USA  [abs]
  153. Fair, R.B., Boron diffusion in silicon-concentration and orientation dependence, background effects, and profile estimation, J. Electrochem. Soc. (USA), vol. 122 no. 6 (1975), pp. 800 - 5  [abs]
  154. Fair, Richard B., COOPERATIVE EFFECTS BETWEEN ARSENIC AND BORON IN SILICON DURING SIMULTANEOUS DIFFUSIONS FROM ION IMPLANTED AND CHEMICAL SOURCE PREDEPOSITIONS., Solid-State Electronics, vol. 17 no. 1 (1974), pp. 17 - 24 [0038-1101(74)90108-7]  [abs]
  155. Fair, R.B., Graphical design and iterative analysis of the DC parameters of GaAs FET's, IEEE Trans. Electron Devices (USA), vol. ED-21 no. 6 (1974), pp. 357 - 62  [abs]
  156. Fair, R.B., Cooperative effects between arsenic and boron in silicon during simultaneous diffusions from ion implanted and chemical source predepositions, Solid-State Electron. (UK), vol. 17 no. 1 (1974), pp. 17 - 24  [abs]
  157. Fair, Richard B., QUANTITATIVE THEORY OF RETARDED BASE DIFFUSION IN SILICON n-p-n STRUCTURES WITH ARSENIC EMITTERS., Journal of Applied Physics, vol. 44 no. 1 (1973), pp. 283 - 291 [1.1661875]  [abs]
  158. Fair, Richard B. and Weber, Gary R., RELATIONSHIP BETWEEN RESISTIVITY AND TOTAL ARSENIC CONCENTRATION IN HEAVILY DOPED n- AND p-TYPE SILICON., Journal of Applied Physics, vol. 44 no. 1 (1973), pp. 280 - 282 [1.1661874]  [abs]
  159. Fair, Richard B. and Weber, Gary R., EFFECT OF COMPLEX FORMATION ON DIFFUSION OF ARSENIC IN SILICON., Journal of Applied Physics, vol. 44 no. 1 (1973), pp. 273 - 279 [1.1661873]  [abs]
  160. Fair, R.B., Correction of calculated vacancy diffusion length at 1000°C in silicon, J. Appl. Phys. (USA), vol. 44 no. 8 (1973), pp. 3794 - 5  [abs]
  161. Fair, R.B., Optimum low-level injection efficiency of silicon transistors with shallow arsenic emitters, IEEE Trans. Electron Devices (USA), vol. ED20 no. 7 (1973), pp. 642 - 7  [abs]
  162. Fair, R.B., Explanation of anomalous base regions in transistors, Appl. Phys. Lett. (USA), vol. 22 no. 4 (1973), pp. 186 - 7  [abs]
  163. Fair, R.B., Quantitative theory of retarded base diffusion in silicon n-p-n structures with arsenic emitters, J. Appl. Phys. (USA), vol. 44 no. 1 (1973), pp. 283 - 91  [abs]
  164. Fair, R.B. and Weber, G.R., Relationship between resistivity and total arsenic concentration in heavily doped n- and p-type silicon, J. Appl. Phys. (USA), vol. 44 no. 1 (1973), pp. 280 - 2  [abs]
  165. Fair, R.B. and Weber, G.R., Effects of complex formation on diffusion of arsenic in silicon, J. Appl. Phys. (USA), vol. 44 no. 1 (1973), pp. 273 - 9  [abs]
  166. Fair, R.B., High concentration arsenic diffusion in silicon from a doped oxide source, J. Electrochem. Soc. (USA), vol. 119 no. 10 (1972), pp. 1389 - 94  [abs]
  167. Fair, R.B., Profile estimation of high-concentration arsenic diffusions in arsenic, J. Appl. Phys. (USA), vol. 43 no. 3 (1972), pp. 1278 - 80  [abs]
  168. Fair, R.B., Harmonic distortion in the junction field-effect transistor with field-dependent mobility, IEEE Trans. Electron Devices (USA), vol. ED-19 no. 1 (1972), pp. 9 - 13  [abs]
  169. Fair, R.B., Analysis and design of ion-beam deposition apparatus, J. Appl. Phys. (USA), vol. 42 no. 8 (1971), pp. 3176 - 81  [abs]
  170. Fair, R.B., A self-consistent method for estimating non-step junction doping profiles from capacitance-voltage measurements, J. Electrochem. Soc. (USA), vol. 118 no. 6 (1971), pp. 971 - 5  [abs]
  171. Fair, R.B., A wide slit scanning method for measuring electron and ion beam profiles, J. Phys. E, Sci. Instrum. (UK), vol. 4 no. 1 (1971), pp. 35 - 6 [008]  [abs]
  172. El-Kareh, A.B. and Fair, R.B. and Marsh, C.R., Pulsed machine-scan electron beam device, Electron and Laser Beam Symposium (1966), pp. 331 - 356  [abs]
  173. Fair, R.B. and Pappas, P.N., Diffusion of ion-implanted B in high concentration P- and As-doped silicon, J. Electrochem. Soc. (USA), vol. 122 no. 9 , pp. 1241 - 4  [abs]
  174. Tsai, J.C.C. and Schimmel, D.G. and Ahrens, R.E. and Fair, R.B., Point defect generation during phosphorus diffusion in silicon. II. Concentrations below solid solubility, ion-implanted phosphorus, J. Electrochem. Soc. (USA), vol. 134 no. 9 , pp. 2348 - 56  [abs]
  175. Fair, R.B. and Manda, M.L. and Wortman, J.J., The diffusion of antimony in heavily doped and n- and p-type silicon, J. Mater. Res. (USA), vol. 1 no. 5 , pp. 705 - 11  [abs]
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